Margherita Capriotti

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We report on gallium droplet nucleation on silicon (100) substrates with and without the presence of the native oxide. The gallium deposition is carried out under ultra-high vacuum conditions at temperatures between 580 and 630 °C. The total droplet volume, obtained from a fit to the diameter-density relation, is used for sample analysis on clean silicon(More)
Articles you may be interested in Gate-control efficiency and interface state density evaluated from capacitance-frequency-temperature mapping for GaN-based metal-insulator-semiconductor devices On the origin of the two-dimensional electron gas at AlGaN/GaN heterojunctions and its influence on recessed-gate metal-insulator-semiconductor high electron(More)
This paper discusses a non-destructive evaluation (NDE) technique for the detection of damage in composite aircraft structures following high energy wide area blunt impact (HEWABI) from ground service equipment (GSE), such as heavy cargo loaders and other heavy equipment. The test structures typically include skin, co-cured stringers, and C-frames that are(More)
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