Marco Mastrapasqua

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A novel technique for the numerical extraction of equivalent circuits from physics-based device simulation is presented. The method is based on the partitioning of the device into functional regions, each corresponding to a circuit block. All the circuit elements have a clear physical interpretation. Element values are directly obtained from small-signal dc(More)
We report the first realization of a charge injection transistor with a complementary collector. The device is implemented using InGaAs/InAlAs/InGaAs heterostructure material grown by molecular beam epitaxy. Real space transfer of hot electrons into the p-type collector leads to a luminescence signal arising from the recombination of the injected electrons(More)
|The name "charge injection" describes the operation of a generic class of electronic and optoelectronic multiterminal semiconductor devices, based on the real space transfer of hot carriers over a potential barrier into adjacent and separately contacted layers. Charge injection devices enable the implementation of compact optoelectronic gates endowed with(More)
A monolithic multi-terminal logic device that functions both optically and electrically as an "ORNAND" gate, is demonstrated for the first time. The device, based on the realspace transfer of hot electrons into a complementary collector layer, has been implemented in MBE-grown InGaAsflnAlAs heterostructure. Excellent performance is obtained at room(More)
Measurements of light emission are reported in the 1.1–2.5 eV energy range, by hot electrons in the In0.53Ga0.47As channel of a complementary charge injection transistor. By comparing electrical characteristics and light emission, there is the ability to identify the intraconduction band transitions as the main light emission mechanism. Hot-electron(More)
• A submitted manuscript is the author's version of the article upon submission and before peer-review. There can be important differences between the submitted version and the official published version of record. People interested in the research are advised to contact the author for the final version of the publication, or visit the DOI to the(More)
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