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—A novel technique for the numerical extraction of equivalent circuits from physics-based device simulation is presented. The method is based on the partitioning of the device into functional regions, each corresponding to a circuit block. All the circuit elements have a clear physical interpretation. Element values are directly obtained from small-signal… (More)
A monolithic multi-terminal logic device that functions both optically and electrically as an "ORNAND" gate, is demonstrated for the first time. The device, based on the real-space transfer of hot electrons into a complementary collector layer, has been implemented in MBE-grown InGaAsflnAlAs heterostructure. Excellent performance is obtained at room… (More)
We report the first realization of a charge injection transistor with a complementary collector. The device is implemented using InGaAs/InAlAs/InGaAs heterostructure material grown by molecular beam epitaxy. Real space transfer of hot electrons into the p-type collector leads to a luminescence signal arising from the recombination of the injected electrons… (More)
| The name "charge injection" describes the operation of a generic class of electronic and optoelectronic multi-terminal semiconductor devices, based on the real space transfer of hot carriers over a potential barrier into adjacent and separately contacted layers. Charge injection devices enable the implementation of compact optoelectronic gates endowed… (More)
The COM2 Enhanced Graded Base SiGe modular BiCMOS technology has been developed. It is based on the COM2 digital CMOS process. The technology achieves peak Ft=100 GHz, peak Fmax=101 GHz, peak /spl beta/=186 and BVcex=2.05 V. Ft-BVcex product of 205 and good across wafer uniformity are demonstrated.