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- Marco E. Vallone
- 2016

- Andrea Palmieri, Marco Calciati, +4 authors Michele Goano
- 2017 International Conference on Numericalâ€¦
- 2017

Commercial CAD tools for carrier transport simulation in optoelectronic devices are commonly based on the drift-diffusion (DD) model. In the design of silicon photonics optical interconnects, the DD approach can be acceptable for p-i-n photodetectors, but may be inadequate for avalanche photodiodes (APDs). Here we discuss the DD limitations in the case ofâ€¦ (More)

- Marco E. Vallone, Andrea Palmieri, +4 authors Fabrizio Forghieri
- 2017 International Conference on Numericalâ€¦
- 2017

Considering a Ge-on-Si waveguide p-i-n photodetector structure inspired by the literature, we have investigated the role of the detector geometry on its electrical and optical (O/E) bandwidth. Due to the structural complexity of the detector, three-dimensional coupled optical and electrical simulations were needed to implement an accurate model. To make anâ€¦ (More)

- Marco Mandurrino, Giovanni Verzellesi, +6 authors Enrico Zanoni
- Numerical Simulation of Optoelectronic Devicesâ€¦
- 2014

We present results from a combined experimental and numerical investigation of a blue InGaN/GaN LED test structure grown on a SiC substrate, confirming that tunneling represents a critical contribution to the sub-threshold forward-bias current and discussing the relative importance of different trap-assisted electron tunneling processes.

- Marco E. Vallone, Francesco Bertazzi, Michele Goano, Giovanni Ghione
- Numerical Simulation of Optoelectronic Devicesâ€¦
- 2014

A quantum model is developed to obtain electron capture time in a quantum well through electron-longitudinal optic phonon emission, as function of carrier density, showing the interplay between phonon and collective plasma modes. We demonstrate that the usual approximation of a constant capture time in modeling of light-emitting diodes is not adequate,â€¦ (More)

- Francesco Bertazzi, Stefano Dominici, +10 authors Michele Goano
- 2015 IEEE 1st International Forum on Research andâ€¦
- 2015

In order to predict through numerical simulation the optical and carrier transport properties of GaN-based light-emitting diodes (LEDs), a genuine quantum approach should be combined with an atomistic description of the electronic structure. However, computational considerations have elicited the empirical inclusion of quantum contributions withinâ€¦ (More)

- Marco E. Vallone, Andrea Palmieri, +9 authors Mayank Bahl
- 2017 International Conference on Numericalâ€¦
- 2017

We present a modeling technique for the efficient broadband simulation of infrared HgCdTe-based focal plane arrays. The approach performs a single broadband FullWAVE<sup>TM</sup> FDTD optical simulation and a series of discrete Fourier transforms for obtaining absorbed photon density profiles on a set of frequencies. These distributions are then aggregated,â€¦ (More)

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