Mara Bruzzi

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  • F.-W Hartmut, Abraham Sadrozinski, Seiden, Mara Bruzzi
  • 2005
Based on recent data of radiation effects in p-type detectors, the expected performance of planned short silicon strip detectors (SSSD) in the ATLAS upgrade tracking detector are evaluated. The signal-to-noise ratio and power generated will be presented as a function of a set of realistic values for the operating parameters: fluence (3·10
In this contribution, the production of defects in radiation fields and their evolution toward equilibrium in silicon for detector uses has been modelled. In the quantitative model developed, the generation rate of primary defects is calculated starting from the projectile-silicon interaction and from recoil energy redistribution in the lattice. The results(More)
Silicon carbide represents a class of semiconductors, due to its polytypism. Besides its properties of interest for semiconductor devices, sometimes better than silicon and diamond, it is supposed to have a good radiation tolerance. In the present work, the bulk degradation of SiC in hadron fields (pions and protons), in the energy range between 100 MeV and(More)
—The charge collected from p-type silicon strip sensors irradiated to SuperLHC fluences has been determined with a beta source using fast front-end electronics. The bias voltage dependence of the collected charge and the hit detection efficiency have been measured before and after accelerated annealing. Predictions of the performance at the SuperLHC are(More)
The charge collected from beta source particles in single pad detectors produced on p-type Magnetic Czochralski (MCz) silicon wafers has been measured before and after irradiation with 26 MeV protons. After a 1MeV neutron equivalent fluence of 1x10 15 cm-2 the collected charge is reduced to 77% at bias voltages below 900 V. This result is compared with(More)