—Radiation effects in silicon detectors are discussed in view of their application in future high-energy physics experiments. An overview is given of the major changes in the operational parameters due to radiation damage and their origin in the radiation-induced microscopic disorder in the silicon bulk. The principal radiation hardening technologies are… (More)
–As part of a program to investigate the feasibility of proton computed tomography, the most likely path (MLP) of protons inside an absorber was measured in a beam experiment using a silicon strip detector setup with high position and angular resolution. The locations of 200 MeV protons were measured at three different absorber depth of PMMA (3.75, 6.25 and… (More)
ix Dedication x Acknowledgments xi 1 Introduction 1 1.
In the present work, the bulk degradation of SiC in hadron (pion and proton) fields, in the energy range between 100 MeV and 10 GeV, is characterised theoretically by means of the concentration of primary defects per unit flu-ence. The results are compared to the similar ones corresponding to diamond, silicon and GaAs.
—The charge collected from p-type silicon strip sensors irradiated to SuperLHC fluences has been determined with a beta source using fast front-end electronics. The bias voltage dependence of the collected charge and the hit detection efficiency have been measured before and after accelerated annealing. Predictions of the performance at the SuperLHC are… (More)
The utilisation of semiconductor materials as detectors and devices operating in high radiation environments, at the future particle colliders, in space applications or in medicine and industry, necessitates to obtain radiation harder materials. A systematic theoretical study has been performed, investigating the interaction of charged hadrons with… (More)
The charge collected from beta source particles in single pad detectors produced on p-type Magnetic Czochralski (MCz) silicon wafers has been measured before and after irradiation with 26 MeV protons. After a 1MeV neutron equivalent fluence of 1x10 15 cm-2 the collected charge is reduced to 77% at bias voltages below 900 V. This result is compared with… (More)