Mao-Feng Lan

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This paper proposes new current mirror layout strategies to reduce the matching sensitivity to the linear parameter gradients. Effects of threshold gradients across a mirror on the matching characteristics of current mirrors are discussed. The performance of new and existing layouts are compared for threshold voltage gradients at arbitrary angles through(More)
This paper proposes a new current mirror layout technique to improve matching characteristics in the presence of parameter gradient. Effects of threshold gradients across a mirror on the matching characteristics of current mirrors are discussed. New and the existing layouts are compared with computer simulations for threshold voltage gradients at all angles(More)
Existing approaches to modeling mismatch effects in matching-critical circuits are based upon models derived under the widely accepted premise that distributed parameter devices can be modeled with lumped parameter models. It is shown in this paper that the lumped parameter models do not consistently reflect device performance and introduce substantial(More)
Widely used approaches to modeling random effects and extracting random parameters in matching-critical circuits are based upon models derived under the widely accepted premise that distributed parameter devices can be modeled with lumped parameter models. In this paper, a new stochastic approach based upon a distributed parameter model is presented that(More)
A new current mirror structure using a nonrectangular dual-drain device with a shared channel to reduce the matching sensitivity to linear parameter gradients is introduced. The new structures are compared with conventional common centroid layouts for threshold voltage gradients at all angles across the active area of a mirror. Results show that in some(More)
A CAD tool, MOSGRAD, that can be used to simulate the effects of distributed two-dimensional systematic and random variations in device parameters on the performance of matchingcritical circuits has been developed. In addition to applications for layouts with conventional rectangular transistors, this tool can predict the performance of non-conventional(More)
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