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First reliability investigations with HBV are presented using pulsed electrical stress. AlGaAs/GaAs material systems as well as InGaAs/InAlAs have been investigated and compared regarding degradation characteristics and mechanisms. Diffusion is proposed to be the responsible degradation mechanism.
—An automated system is developed to evaluate a large number Schottky diodes for terahertz applications with respect to their dc and noise characteristics using a highly sensitive noise measurement technique for one port devices. An extensive RF switching matrix allows noise characterization of one port devices at selected frequency points over a bandwidth… (More)