Manuel Quevedo

Learn More
NBTI of the HfSiO x /TiN gate stack is investigated as a function of the dielectric thickness. It is shown that as the thickness of the HfSiO x layer is reduced below 20Å, the NBTI mechanism approaches the mechanism that induces H-reaction diffusion. Conversely, for thicker HfSiO x dielectrics, a combination of H-reaction-diffusion and charge detrapping(More)
Objectives: Auditory steady-state responses (ASSR) using frequencies of modulation between 70-110 Hz are a new auditive exploration technique. The aim of the study was to evaluate the contribution of the ASSR to diagnostic of the audition. Material and method: Different aportations of auditory steady-states responses (ASSR) and auditory brain-stem responses(More)
  • 1