Mansour Mortazavi

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We report a large spin-polarized current injection from a ferromagnetic metal into a nonferromagnetic semiconductor, at a temperature of 100 Kelvin. The modification of the spin-injection process by a nanoscale step edge was observed. On flat gallium arsenide [GaAs(110)] terraces, the injection efficiency was 92%, whereas in a 10-nanometer-wide region(More)
Global optical interconnects can provide high data rate parallel communication capability through access to the internal nodes of very large scale integrated circuits. Topographic arrays of polymeric electrooptic multilayer devices such as etalons or multilayer mirrors broadcast the data stored on the surface of the chip. Differential detection of this(More)
A new technique for the fabrication of freestanding poled polymer films that uses a metallic film as the lifting-off layer is reported. This technique is used to make low-transmission-loss bulk periodic synthetic-crystals structures that satisfy a quasi-phase-matching condition for second-harmonic generation. Efficiency of the order of 10(-2)% is obtained(More)
A SiGeSn/GeSn/SiGeSn single quantum well structure was grown using an industry standard chemical vapor deposition reactor with low-cost commercially available precursors. The material characterization revealed the precisely controlled material growth process. Temperature-dependent photoluminescence spectra were correlated with band structure calculation for(More)
The computing paradigm of ubiquitous/pervasive computing has changed the way in which nomadic computer users interact with computer devices and network systems. Modern ubiquitous computing devices have enabled nomadic computer users to interact with computer and network systems anywhere and at anytime. Although the issue of cyber security has been(More)
A low-temperature hydrogenation-assisted sequential deposition and crystallization technique is reported for the preparation of nano-scale silicon quantum dots suitable for light-emitting applications. Radio-frequency plasma-enhanced deposition was used to realize multiple layers of nano-crystalline silicon while reactive ion etching was employed to create(More)
InGaAs quantum wire (QWr) intermediate-band solar cell-based nanostructures grown by molecular beam epitaxy are studied. The electrical and interface properties of these solar cell devices, as determined by current-voltage (I-V) and capacitance-voltage (C-V) techniques, were found to change with temperature over a wide range of 20-340 K. The electron and(More)
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