Manijeh Razeghi

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Research into avalanche photodiodes (APDs) is motivated by the need for high sensitivity ultraviolet (UV) detectors in numerous civilian and military applications. By designing photodetectors to utilize low-noise impact ionization based gain, GaN APDs operating in Geiger mode can deliver gains exceeding 1×10 7. Thus with careful design, it becomes possible(More)
Research into III-Nitride based avalanche photodiodes (APDs) is motivated by the need for high sensitivity ultraviolet (UV) detectors in numerous civilian and military applications. By designing III-Nitride photodetectors that utilize low-noise impact ionization high internal gain can be realized—GaN APDs operating in Geiger mode can achieve gains exceeding(More)
A compact, high power, room temperature continuous wave terahertz source emitting in a wide frequency range (ν~1-5 THz) is of great importance to terahertz system development for applications in spectroscopy, communication, sensing, and imaging. Here, we present a strong-coupled strain-balanced quantum cascade laser design for efficient THz generation based(More)
oxide moves further into the oxide moves further into the oxide moves further into the oxide moves further into the ultraviolet ultraviolet ultraviolet ultraviolet 10/10/2013 Recent breakthroughs in the alloying of zinc oxide (ZnO) with magnesium (Mg) could offer an alternative to (Al)GaN-based emitters/detectors in the deep UV with reduced lattice and(More)
Novel combinations of zinc oxide and gallium nitride offer enhanced efficiency, lifetime, and spectral coverage for next-generation optoelec-tronic devices. Since the development of p-type doping of gallium nitride (GaN) in the early 1990s, 1–4 there has been rapid industrial development for optoelectronic devices based on alloys of GaN with aluminum and(More)
There is a need for semiconductor-based ultraviolet photodetectors to support avalanche gain in order to realize better performance andmore effective compete with existing technologies. Wide bandgap III-Nitride semiconductors are the promising material system for the development of avalanche photodiodes (APDs) that could be a viable alternative to current(More)
  • Jose Luis Pau, Ryan Mcclintock, Kathryn Minder, Donald Silversmith, Manijeh Razeghi
  • 2008
—The authors report on the current–voltage (–) characteristic under forward biases obtained in low leakage, small size p-(In,Ga)N–GaN-n multiquantum well diodes. Under barrier illumination, the devices present a high optical response with capabilities to detect optical powers in the pW range without further amplification. This response is attributed to the(More)
The use of nanostructures in semiconductor technology leads to the observation of new phenomena in device physics. Further quantum and non-quantum effects arise from the reduction of device dimension to a nanometric scale. In nanopillars, quantum confinement regime is only revealed when the lateral dimensions are lower than 50 nm. For larger mesoscopic(More)
  • Kathryn Minder, Hosseini Ferechteh, Teherani, Dave Rogers, Can Bayram, Ryan Mcclintock +2 others
  • 2007
Although ZnO has recently gained much interest as an alternative to the III-Nitride material system, the development of ZnO based optoelectonic devices is still in its infancy. Significant material breakthroughs in p-type doping of ZnO thin films and improvements in crystal growth techniques have recently been achieved, making the development of(More)