Maike Taddiken

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An analog system's performance can be influenced by many factors such as age-dependent degradation effects which need to be considered during the design process. Transistor level degradation analysis is very time-consuming for large and complex circuits. Behavioral models can be used to speed up the simulation and enable an evaluation on a higher(More)
Ring oscillators exhibit a strong temperature dependency. Additionally, degradation in CMOS transistors affects the performance of circuits over time and is strongly dependent on temperature during circuit operation. In order to design robust and reliable ring oscillator-based circuits, both temperature dependencies have to be considered. This work(More)
Analog circuit performance are degrading by effects like HCI and NBTI. These performance shifts need to be evaluated by the designer to meet given specifications. The evaluation on transistor level enables an accurate prediction of degradation behavior for a chosen circuit. However, this task is very time-consuming for complex analog circuitry. This paper(More)
Process variation and aging effects influence the performances of integrated circuits in modern technology nodes. In this paper, a method is proposed to build a behavioral model to represent the influences of process variation, aging and operational parameters on circuit performances. The variability of performance is represented using distribution(More)
In modern CMOS processes, several non-ideal influences affect the functionality of integrated circuits. In order to analyze and reduce these influences, time intensive circuit simulations are performed at transistor level. Although numerous non-idealities are considered in such simulations, they cannot be analyzed separately since they are inherent parts of(More)
In this paper a Reliability-AwaRE (RARE) method based on the gm/ID-methodology is presented which allows designers of integrated analog circuits to consider process as well as environmental variations and aging effects already at early design stages. The proposed method makes aging simulations on system level superfluous by utilizing a stochastic Look-Up(More)
In this paper a comprehensive analysis of 12 different extraction methods for the threshold voltage V<inf>th</inf> is presented. Accounting for the emerging needs of advanced technology nodes the methods are evaluated with TCAD simulations of FDSOI, Bulk and Fin MOSFET devices. The presented analysis provides Figures of Merit in order to choose the most(More)
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