Maheswari Kavirajan Kavitha

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Nanostructured ZnO is a promising material for optoelectronic and nonlinear optical applications because of the flexibility of band gap engineering by means of various defect states present in it. Employing the time-correlated single photon counting photoluminescence technique, the correlation between defect levels and optoelectronic and nonlinear optical(More)
Graphene oxide is solution-process able and widely tunable semiconductor which has potential applications as transparent electrode materials in organic solar cells as well as chemical sensors and interconnects. It is also amenable to micro-patterning with laser-induced heating. Density of defects and water permeation are among the major factors affecting(More)
ZnO is a wide direct bandgap semiconductor; its absorption can be tuned to the visible spectral region by controlling the intrinsic defect levels. Combining graphene with ZnO can improve its performance by photo-induced charge separation by ZnO and electronic transport through graphene. When reduced graphene oxide-ZnO is prepared by a hydrothermal method,(More)
We demonstrate that crack propagation in uniaxially strained reduced graphene oxide (rGO) films is substantially dependent on the film thickness, for films in the sub-micron regime. rGO film on flexible polydimethylsiloxane (PDMS) substrate develop quasi-periodic cracks upon application of strain. The crack density and crack width follow contrasting trends(More)
We investigate temperature-dependent charge transport in reduced graphene oxide (rGO) films coated on flexible polydimethylsiloxane (PDMS) substrates which are subject to uniaxial strain. Variable strain, up to 10%, results in an anisotropic morphology comprising of quasi-periodic linear array of deformations which are oriented perpendicular to the(More)
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