Mahdi Vadizadeh

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In this paper, we have shown that off-state current in the Tunneling Field Effect Transistor (TFET) can be reduced dramatically by using a low-k oxide and employing gate work function engineering. In order to enhance I<inf>on</inf>/I<inf>off</inf> ratio in the TFET, the effect of second gate employing has been investigated, hence using a low-k oxide for the(More)
In this paper, we introduce a novel double gate SHOT which provides at least the drain current twice higher than that of the conventional single gate SHOT structure. Improved characteristics are originated from the high velocity electron injection at the source edge due to the band offset energy. However, these devices suffer from large off-state current.(More)
The source-heterojunction-MOS-transistor provides high drain current. This is originated from the high velocity electron injection at the source edge due to band offset energy. However, these devices suffer from large off- state current. In this paper, we have analyzed the off-state current in this device and have proposed use of work function engineering(More)
In this paper, we have shown that off-state current in the tunneling field effect transistor (TFET) can be reduced dramatically by using an ¿asymmetric¿ gate oxide thickness and employing gate work function engineering. This procedure does not affect driving current while reduces I<sub>off</sub> by 5 orders magnitude, hence obtained the noticeable of(More)
In this paper, we introduce a novel double gate SHOT which provides at least the drain current twice higher than that of the conventional SHOT structure. Improved characteristics are originated from the high velocity electron injection at the source edge due to the band offset energy. The analysis of the off-state current characteristics shows that provided(More)
Operational amplifiers can be found in buffer, adder, comparator, negative impedance converter, and integrator and differentiator circuits. In fact, operational amplifiers are basic blocks of analog and digital circuits. In this article, a single-stage operational amplifier with CMOS 180nm technology was designed . The amplifier was simulated with the help(More)
In order to enhance I<inf>on</inf>/I<inf>off</inf> ratio in the Double Gate Tunneling Field Effect Transistor (DG-TFET), employing a double gate structure has been investigated. Furthermore by employing a low-k oxide for the gate near the drain side (Gate2) fringing field effects are suppressed. Hence, the leakage current is decreased. Also a work function(More)
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