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The leakage current increase of silicon detectors irradiated with fast neutrons was measured in the fluence range from 10 11 to 10 15 cm-2 for a wide range of different starting material. The oxygen concentration in the investigated silicon varied from 9×10 17 cm-3 to below 2×10 14 cm-3 and the carbon concentration from 2×10 16 cm-3 to below 5×10 15 cm-3.(More)
Neutron irradiated high resistivity silicon detectors have been subjected to isochronous annealing in order to study the changes in the full depletion voltage and the leakage current. The corresponding evolution of bulk damage induced defect levels was monitored using the TSC method. A single TSC peak is found to be correlated with the transient decay of(More)
An overview of the radiation damage induced problems connected with the application of silicon particle detectors in future high energy physics experiments is given. Problems arising from the expected hadron fluences are summarized and the use of the nonionizing energy loss for normalization of bulk damage is explained. The present knowledge on the(More)
Silicon detectors produced from materials with different doping and oxygen concentration have been irradiated with 27 MeV and 23 GeV protons, 192 MeV pions and 5.3 MeV neutrons. In isothermal annealing studies at 60°C the microscopic defect evolution (measured with DLTS) and the changes in the detector leakage current were monitored in parallel. It is shown(More)
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