Magali Estrada

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The threshold voltage value, which is the most important electrical parameter in modeling MOSFETs, can be extracted from either measured drain current or capacitance characteristics, using a single or more transistors. Practical circuits based on some of the most common methods are available to automatically and quickly measure the threshold voltage. This(More)
Polymeric solar cells have attracted much attention during the last years due to their lower fabrication cost and possibility of using flexible substrates. However, their efficiency is usually less than 5%. Among factors affecting polymeric solar cells efficiency, the active layer morphology related to blend preparation and annealing, is one of the most(More)
Article history: Received 11 January 2012 Received in revised form 27 March 2012 Accepted 25 April 2012 Available online 26 May 2012 0026-2714/$ see front matter 2012 Elsevier Ltd. A ⇑ Corresponding author. E-mail address: (A. Cerdeir In this work we present a procedure for modeling the(More)
During the last years, high-k dielectrics have been studied intensively looking for an alternative material to replace the SiO2 films as gate dielectric in MOS transistors. Different materials and structures have been proposed. An important concern not yet solved, is the interfacial quality between high-k materials and silicon substrate. For this reason,(More)
Recently we developed a model for symmetric double-gate MOSFETs (SDDGM) that, for the first time, considers the doping concentration in the Si film in the complete range from 1 10 to 3 10 cm . The model covers a wide range of technological parameters and includes short channel effects. It was validated for different devices using data from simulations, as(More)
Wide band gap materials like LiF are being used as electron/injection layers (EIL/ETL) in PLEDs, to improve their efficiency. Recently, another wide gap material, TiOx, is being studied as an alternative for these EIL/ETL layers. TiOx layers are also studied as optical spacer for PSCs. In this work, TiOx layers of different thickness were deposited by spin(More)
This paper presents the expressions and procedure for precise and simple modeling of the subthreshold region of OTFTs. The total drain current in the OTFT is calculated as the sum of two components, one calculated in above threshold regime plus the one corresponding to the below threshold regime. The tanh function is used to sew both regions. Good agreement(More)