Maarten L. Van de Put

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Strain can strongly impact the performance of III-V tunnel field-effect transistors (TFETs). However, previous studies on homostructure TFETs have found an increase in ON-current to be accompanied with a degradation of subthreshold swing. We perform 30-band quantum mechanical simulations of staggered heterostructure p-n-i-n TFETs submitted to uniaxial and(More)
Tunnel-FETs (TFETs) promise a subthreshold swing (SS) smaller than 60mV/dec and are considered as interesting candidates to replace MOSFET in future low-power technology nodes. The road ahead is challenging, with large discrepancy between experiment and prediction, the latter showing extremely promising performance for heterostructure TFET at small supply(More)
The Wigner-Liouville (WL) equation is well suited to describe electronic transport in semiconductor devices. In the effective mass approximation the one dimensional WL equation reads &#x2202;/&#x2202;t f(x, p, t) + p/m &#x2202;/&#x2202;x f(x, p, t)-1/h<sup>2</sup> &#x222B; dp' W(x, p-p')f(x, p', t) = 0; (1) with the Wigner kernel given by W(x, p) =(More)
A carefully chosen heterostructure can significantly boost the performance of tunnel field-effect transistors (TFET). Modelling of these hetero- TFETs requires a quantum mechanical (QM) approach with an accurate band structure to allow for a correct description of band-to-band-tunneling. We have therefore developed a fully QM 2D solver, combining for the(More)
Heterostructures of III-V materials under a mechanical strain are being actively researched to enhance the performance of the tunnel field-effect transistor (TFET). In scaled III-V device structures, however, the interplay between the effects of strain and quantum confinement on the semiconductor band structure and hence the performance is highly(More)
The tunneling current between two crossed graphene ribbons is described invoking the empirical pseudopotential approximation and the Bardeen transfer Hamiltonian method. Results indicate that the density of states is the most important factor determining the tunneling current between small (~nm) ribbons. The quasi-one dimensional nature of graphene(More)
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