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Journals and Conferences
An original method for the extraction of FET parameters at low drain bias is presented. It is based on a simple linear charge-control model and on a power-law dependence (with an exponent k ≫… (More)
We studied the influence of the growth temperature T<inf>s</inf> and of the InGaAs quantum-well channel thickness d<inf>ch</inf> on the 300 and 77 K Hall electrical properties of pseudomorphic… (More)