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- M.A. Shibib, F. L. Lindholm, J. G. Fossum
- IEEE Transactions on Electron Devices
- 1979

A rigorous analytic evaluation of an emitter model that includes Auger recombination but excludes bandgap narrowing is presented. It is shown that such a model cannot explain the experimentallyâ€¦ (More)

- M.A. Shibib, F. L. Lindholm, F. Therez
- IEEE Transactions on Electron Devices
- 1979

An analytical treatment of heavily doped transparentemitter devices is presented that includes the effects of bandgap narrowing, Fermi-Dirac statistics, a doping concentration gradient, and a finiteâ€¦ (More)

- M.A. Shibib, F. L. Lindholm
- IEEE Transactions on Electron Devices
- 1980

The recent models of Heasell and Popovic are discussed from the unifying viewpoint that both use the deionization of impurities to try to explain the excess intrinsic carrier density (or deficitâ€¦ (More)

- J. G. Fossum, M.A. Shibib
- IEEE Transactions on Electron Devices
- 1981

A simple analytic description of the minority-carrier current injected into typical diffused (or ion-implanted) heavily doped regions of silicon bipolar devices is derived. The effects ofâ€¦ (More)

- M. N. Marbell, S. Cherepko, J. C. M. Hwang, M.A. Shibib, W. R. Curtice
- IEEE Transactions on Device and Materialsâ€¦
- 2008

For the first time, the effects of dummy-gate geometry and bias on breakdown and degradation of LDMOSFETs are quantified both theoretically and experimentally. First, the effects of dummy-gateâ€¦ (More)

- J. G. Fossum, M.A. Shibib
- 1980 International Electron Devices Meeting
- 1980

A physical, analytic model for heavily doped polysilicon contacts to silicon bipolar devices is developed. The model defines an effective surface recombination velocity Sefffor minority carriers atâ€¦ (More)

- M. N. Marbell, S. Cherepko, J. C. M. Hwang, M.A. Shibib, W. R. Curtice
- IEEE Transactions on Electron Devices
- 2007

The bias effects of dummy gate on drain current, resistance, capacitance, quasi-saturation, and breakdown of Si laterally diffused MOSFET transistor (LDMOSFET) are modeled and characterized.â€¦ (More)

- A. Marshak, M.A. Shibib, J. G. Fossum, F. L. Lindholm
- IEEE Transactions on Electron Devices
- 1981

The conventional carrier transport equations used in device analysis must be modified for heavily doped semiconductor regions. The modifications to Shoekley's auxiliary equations relating the carrierâ€¦ (More)

- M. N. Marbell, S. Cherepko, A. Vidal â€“ Madjar, J. C. M. Hwang, Michelle S Frei, M.A. Shibib
- 34th European Microwave Conference, 2004.
- 2004

An improved large-signal model was developed for harmonic-balance simulation of RF power Si LD-MOSFETs. The model augments the popular BSIM4 model with a voltagecontrolled voltage source to accountâ€¦ (More)

- R. J. McDonald, J. G. Fossum, M.A. Shibib
- IEEE Transactions on Electron Devices
- 1985

Analytic models for the steady-state forward current-voltage characteristic of a p+-p-Ï€-p-n+gated-diode switch (GDS) are developed. The models, which apply generally to gated bipolar switches, areâ€¦ (More)