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  • M. Z. Dai, S. I. Kim, Andrew Yap, Shaohua Liu, Arthur Cheng, Leeward Yi
  • Computer Science, Engineering
  • Microelectron. Reliab.
  • 2008 (First Publication: 1 April 2008)
  • Abstract To characterize hot-carrier-injection degradation, a typical reaction–diffusion model has been used in low-voltage NMOSFETs with only hot-electron-injection. In this paper, an improvedContinue Reading