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CHARGE EQUILIBRATION TIME OF SLOW, HIGHLY CHARGED IONS IN SOLIDS
- M. Hattass, T. Schenkel, D. Schneider
- Physics
- 14 June 1999
We report observations of nonequilibrium charge state distributions of slow, highly charged (33+{le} q{le}75+) ions after transmission of thin carbon foils. Charge equilibration times are determined…
Hydrogenated carbon clusters produced by highly charged ion impact on solid
- T. Schlathölter, M. W. Newman, A. Hamza
- Chemistry
- 1 November 2000
Abstract:The emission of small (hydrogenated) carbon cluster ions CnHm+ (n=2-22) upon highly charged Xeq+ (q=20-44) impact on C84 surfaces is studied by means of time-of-flight secondary ion mass…
DEPOSITION OF POTENTIAL ENERGY IN SOLIDS BY SLOW, HIGHLY CHARGED IONS
- T. Schenkel, A. Barnes, D. Schneider
- Materials Science, Physics
- 22 November 1999
We have measured the deposition of potential energy of slow $(\ensuremath{\sim}6\ifmmode\times\else\texttimes\fi{}{10}^{5}\mathrm{m}/\mathrm{s})$, highly charged ions in solids with an ion implanted…
The effects of radiation on (1,3,5 - triamino - 2,4,6 - trinitrobenzene) TATB studied by time-of-flight secondary ion mass spectrometry
- J. McDonald, T. Schenkel, A. Hamza
- Physics, Chemistry
- 1 June 2001
Abstract Highly Charged Ion (HCI) Time-of-Flight (TOF) Secondary Ion Mass Spectrometry (SIMS) has been employed to analyze the changes in the surface composition of TATB caused by low energy…
Surface charge compensation for a highly charged ion emission microscope.
- J. McDonald, A. Hamza, M. W. Newman, J. Holder, D. Schneider, T. Schenkel
- PhysicsUltramicroscopy
- 1 April 2003
Electronic desorption of alkyl monolayers from silicon by very highly charged ions
- T. Schenkel, Marilyn B. Schneider, C. Chidsey
- Physics, Chemistry
- 2 December 1998
Self-assembled alkyl monolayers on Si (111) were exposed to low doses of slow (v≈6.6×105 m/s≈0.3vBohr), highly charged ions, like Xe41+ and Th73+. Atomic force microscope images show craters from…
Surface Analysis by Highly Charged Ion Based Secondary Ion Mass Spectrometry
- T. Schenkel, A. Hamza, R. Odom
- Physics, Chemistry
- 1999
Electronic sputtering in the interaction of slow (v < 106 m/s), highly charged ions (e.g., Au69+) with solid surfaces increases secondary ion yields by over two orders of magnitude compared to…
Electronic sputtering of solids by slow, highly charged ions: Fundamentals and applications
- T. Schenkel, M. W. Newman, K. J. Wu
- Physics
- 20 July 1999
Influence of hydrogen on the stability of positively charged silicon dioxide clusters
- T. Schenkel, T. Schlathölter, M. W. Newman, G. Machicoane, J. McDonald, A. Hamza
- Physics, Chemistry
- 8 August 2000
Spectra of positively charged secondary ions from thermally grown SiO2 films were recorded in a time-of-flight secondary ion mass spectrometry scheme. Ablation of cluster ions was induced by the…
Light-emitting nanostructures formed by intense, ultrafast electronic excitation in silicon (100)
- A. Hamza, M. W. Newman, D. Schneider
- Chemistry, Physics
- 23 October 2001
The intense, ultrafast electronic excitation of clean silicon (100)–(2×1) surfaces leads to the formation of silicon nanostructures embedded in silicon, which photoluminescence at ∼560 nm wavelength…
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