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CHARGE EQUILIBRATION TIME OF SLOW, HIGHLY CHARGED IONS IN SOLIDS
- M. Hattass, T. Schenkel, +6 authors D. Schneider
- Materials Science
- 14 June 1999
We report observations of nonequilibrium charge state distributions of slow, highly charged (33+{le} q{le}75+) ions after transmission of thin carbon foils. Charge equilibration times are determined… Expand
Hydrogenated carbon clusters produced by highly charged ion impact on solid
- T. Schlathölter, M. W. Newman, +5 authors A. Hamza
- Materials Science, Physics
- 1 November 2000
Abstract:The emission of small (hydrogenated) carbon cluster ions CnHm+ (n=2-22) upon highly charged Xeq+ (q=20-44) impact on C84 surfaces is studied by means of time-of-flight secondary ion mass… Expand
DEPOSITION OF POTENTIAL ENERGY IN SOLIDS BY SLOW, HIGHLY CHARGED IONS
- T. Schenkel, A. Barnes, +6 authors D. Schneider
- Materials Science
- 22 November 1999
We have measured the deposition of potential energy of slow $(\ensuremath{\sim}6\ifmmode\times\else\texttimes\fi{}{10}^{5}\mathrm{m}/\mathrm{s})$, highly charged ions in solids with an ion implanted… Expand
Electronic desorption of alkyl monolayers from silicon by very highly charged ions
- T. Schenkel, M. Schneider, +6 authors C. Chidsey
- Chemistry
- 2 December 1998
Self-assembled alkyl monolayers on Si (111) were exposed to low doses of slow (v≈6.6×105 m/s≈0.3vBohr), highly charged ions, like Xe41+ and Th73+. Atomic force microscope images show craters from… Expand
Electronic sputtering of solids by slow, highly charged ions: Fundamentals and applications
- T. Schenkel, M. W. Newman, +7 authors K. J. Wu
- Materials Science
- 20 July 1999
Electronic sputtering in the interaction of slow (v < vBohr), highly charged ions (SHCI) with solid surfaces has been subject of controversial discussions for almost 20 years. We review results from… Expand
Influence of hydrogen on the stability of positively charged silicon dioxide clusters
- T. Schenkel, T. Schlathölter, M. W. Newman, G. Machicoane, J. McDonald, A. Hamza
- Chemistry
- 8 August 2000
Spectra of positively charged secondary ions from thermally grown SiO2 films were recorded in a time-of-flight secondary ion mass spectrometry scheme. Ablation of cluster ions was induced by the… Expand
Light-emitting nanostructures formed by intense, ultrafast electronic excitation in silicon (100)
- A. Hamza, M. W. Newman, +4 authors D. Schneider
- Physics
- 23 October 2001
The intense, ultrafast electronic excitation of clean silicon (100)–(2×1) surfaces leads to the formation of silicon nanostructures embedded in silicon, which photoluminescence at ∼560 nm wavelength… Expand
Surface Analysis by Highly Charged Ion Based Secondary Ion Mass Spectrometry
- T. Schenkel, A. Hamza, +8 authors R. Odom
- Materials Science
- 1999
Electronic sputtering in the interaction of slow (v < 106 m/s), highly charged ions (e.g., Au69+) with solid surfaces increases secondary ion yields by over two orders of magnitude compared to… Expand
The effects of radiation on (1,3,5 - triamino - 2,4,6 - trinitrobenzene) TATB studied by time-of-flight secondary ion mass spectrometry
- J. McDonald, T. Schenkel, +7 authors A. Hamza
- Chemistry
- 1 June 2001
Abstract Highly Charged Ion (HCI) Time-of-Flight (TOF) Secondary Ion Mass Spectrometry (SIMS) has been employed to analyze the changes in the surface composition of TATB caused by low energy… Expand
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