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Journals and Conferences
The results of study of avalanche S-diodes in circuit with pulse optical drive are presented. Experimental dependences of delay time of S-diodes switch on laser energy with wave-length 0.78 mkm are… (More)
New optoelectronic switching device was developed. Avalanche GaAs S-diode and light-emitting diode are integrated in the single crystal. It is presented main static characteristics of the device.
Results of investigation of forward and reverse current-voltage characteristics (CVC) of diodes based on GaAs doped by Cr (GaAs:Cr) and doped by Cr, Fe simultaneously (GaAs:Cr,Fe) are stated. It is… (More)
The paper demonstrates the experimental results of testing of multichannel GaAs: Cr detector prototypes for X-ray transmission sorters. The results of investigations of X-ray image quality dependence… (More)
New optoelectronic switching device was developed. Avalanche GaAs-diode and light-emitting diode are integrated in the single crystal. It is present maim static characteristics of the devise.
This paper presents information on the manufacturing and design of dipole antennas on high-resistivity gallium arsenide compensated with chromium. A comparison of the operating parameters of antennas… (More)