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193-nm CD shrinkage under SEM: modeling the mechanism
As photolithography platforms move from 248nm to 193nm resist systems, the industry's established dimension measurement technique (CD-SEM) causes significant shrinkage of the resist structures duringExpand
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Mechanism studies of scanning electron microscope measurement effects on 193-nm photoresists and the development of improved line-width measurement methods
The effect of scanning electron microscope (SEM) measurements on the dimensions of resist features was studied for 193nm resist materials. Initial measurements showed that resist lines became smallerExpand
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Principles of femtosecond X-ray/optical cross-correlation with X-ray induced transient optical reflectivity in solids
The discovery of ultrafast X-ray induced optical reflectivity changes enabled the development of X-ray/optical cross correlation techniques at X-ray free electron lasers worldwide. We have now linkedExpand
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Dielectric and chemical characteristics of electron-beam-cured photoresist
This paper investigates the dielectric properties and chemical changes occurring in electron beam cured photoresist and how they compare with photoresist cured with standard thermal bake. TheExpand
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E-beam curing effects on the etch and CD-SEM stability of 193-nm resists
Electron beam (e-beam) curing techniques are known to improve etch and CD-SEM stability of 248 and 193nm resists. The effects of three different e-beam curing processes (standard, LT and ESC) on theExpand
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Advanced metal lift-off process using electron-beam flood exposure of single-layer photoresist
In the manufacture of many types of integrated circuit and thin film devices, it is desirable to use a lift-of process for the metallization step to avoid manufacturing problems encountered whenExpand
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New drug therapy: Augmentin.
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Electron beam hardening of photo resist
Electron beam hardening is investigated and compared with conventional thermal hardening on a diazoquinone novolac (DQN) photoresist. The electron beam hardening is accomplished without significantExpand
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Plasma etch characteristics of electron-beam processed photoresist
This paper investigates the plasma etch characteristics of electron beam processed photoresist. A standard positive novolak photoresist, as well as an advanced deep-UV photoresist, are evaluated.Expand
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Modification of 193-nm (ArF) photoresists by electron beam stabilization
For the sub 130nm technology nodes, 193nm(ArF) lithography has become the technology path of choice. Similar to the 248nm technology set, the resist systems being used for 193nm lithography are basedExpand
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