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- Publications
- Influence
193-nm CD shrinkage under SEM: modeling the mechanism
- Andrew Habermas, Dongsung Hong, M. Ross, W. R. Livesay
- Materials Science, Engineering
- SPIE Advanced Lithography
- 1 July 2002
As photolithography platforms move from 248nm to 193nm resist systems, the industry's established dimension measurement technique (CD-SEM) causes significant shrinkage of the resist structures during… Expand
Mechanism studies of scanning electron microscope measurement effects on 193-nm photoresists and the development of improved line-width measurement methods
- T. R. Sarrubi, M. Ross, +5 authors W. Ng
- Chemistry, Engineering
- SPIE Advanced Lithography
- 24 August 2001
The effect of scanning electron microscope (SEM) measurements on the dimensions of resist features was studied for 193nm resist materials. Initial measurements showed that resist lines became smaller… Expand
Principles of femtosecond X-ray/optical cross-correlation with X-ray induced transient optical reflectivity in solids
- S. Eckert, M. Beye, +13 authors A. Föhlisch
- Physics
- 9 February 2015
The discovery of ultrafast X-ray induced optical reflectivity changes enabled the development of X-ray/optical cross correlation techniques at X-ray free electron lasers worldwide. We have now linked… Expand
Dielectric and chemical characteristics of electron-beam-cured photoresist
- Ernesto S. Sison, M. Rahman, D. Durham, J. Hermanowski, M. Ross, Michael J. Jennison
- Materials Science, Engineering
- Advanced Lithography
- 9 June 1995
This paper investigates the dielectric properties and chemical changes occurring in electron beam cured photoresist and how they compare with photoresist cured with standard thermal bake. The… Expand
E-beam curing effects on the etch and CD-SEM stability of 193-nm resists
- M. Padmanaban, Eric L. Alemy, +10 authors M. Ross
- Materials Science, Engineering
- SPIE Advanced Lithography
- 15 July 2002
Electron beam (e-beam) curing techniques are known to improve etch and CD-SEM stability of 248 and 193nm resists. The effects of three different e-beam curing processes (standard, LT and ESC) on the… Expand
Advanced metal lift-off process using electron-beam flood exposure of single-layer photoresist
- J. Minter, M. Ross, W. R. Livesay, S. Wong, M. Narcy, Trey Marlowe
- Materials Science, Engineering
- Advanced Lithography
- 11 June 1999
In the manufacture of many types of integrated circuit and thin film devices, it is desirable to use a lift-of process for the metallization step to avoid manufacturing problems encountered when… Expand
Electron beam hardening of photo resist
- W. R. Livesay, A. L. Rubiales, M. Ross, Scott Woods, S. Campbell
- Materials Science, Engineering
- Advanced Lithography
- 15 September 1993
Electron beam hardening is investigated and compared with conventional thermal hardening on a diazoquinone novolac (DQN) photoresist. The electron beam hardening is accomplished without significant… Expand
Plasma etch characteristics of electron-beam processed photoresist
- M. Ross, D. Comfort, G. Gorin
- Materials Science, Engineering
- Advanced Lithography
- 9 June 1995
This paper investigates the plasma etch characteristics of electron beam processed photoresist. A standard positive novolak photoresist, as well as an advanced deep-UV photoresist, are evaluated.… Expand
Modification of 193-nm (ArF) photoresists by electron beam stabilization
- P. Martens, Shigeki Yamamoto, +5 authors W. R. Livesay
- Materials Science, Engineering
- SPIE Advanced Lithography
- 24 August 2001
For the sub 130nm technology nodes, 193nm(ArF) lithography has become the technology path of choice. Similar to the 248nm technology set, the resist systems being used for 193nm lithography are based… Expand