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Electron localization in the insulating state: Application to crystalline semiconductors
- C. Sgiarovello, M. Peressi, Raffaele Resta Irrma, Lausanne Infm, D. F. Teorica, Trieste
- Physics
- 29 January 2001
We measure electron localization in different materials by means of a ``localization tensor'', based on Berry phases and related quantities. We analyze its properties, and we actually compute such…
First-Principle Study of Hydroxyl Functional Groups on Pristine, Defected Graphene, and Graphene Epoxide
- N. Ghaderi, M. Peressi
- Physics
- 17 November 2010
Oxygen-containing functional groups can be present in considerable amount intentionally or unintentionally on graphene, and a complete reduction of graphene oxide is difficult to achieve. To address…
Band engineering at interfaces : Theory and numerical experiments
- M. Peressi, N. Binggeli, A. Baldereschi
- Computer Science
- 7 June 1998
TLDR
Atomic Scale Identification of Coexisting Graphene Structures on Ni(111).
- F. Bianchini, L. Patera, M. Peressi, C. Africh, G. Comelli
- Materials ScienceThe journal of physical chemistry letters
- 17 January 2014
TLDR
Interaction of carbon dioxide with Ni(110): a combined experimental and theoretical study
- Xunlei Ding, L. D. Rogatis, M. Peressi
- Chemistry
- 16 November 2007
We present a combined experimental and theoretical study of the CO2 interaction with the Ni(110) surface. Photoelectron spectroscopy, temperature-programmed desorption, and high-resolution electron…
Trapping of Charged Gold Adatoms by Dimethyl Sulfoxide on a Gold Surface.
- Zhijing Feng, S. Velari, G. Comelli
- Chemistry, PhysicsACS nano
- 24 June 2015
TLDR
Graphene on nickel (100) micrograins: Modulating the interface interaction by extended moiré superstructures
- Z. Zou, V. Carnevali, C. Africh
- Physics, Chemistry
- 1 April 2018
On the concentration of large deviations for fat tailed distributions
- M. Filiasi, G. Livan, M. Marsili, M. Peressi, E. Vesselli, E. Zarinelli
- Physics
- 13 January 2012
For fat tailed distributions (i.e. those that decay slower than an exponential), large deviations not only become relatively likely, but the way in which they are realized changes dramatically: A…
Can We Tune the Band Offset at Semiconductor Heterojunctions
- S. Baroni, R. Resta, A. Baldereschi, M. Peressi
- Physics
- 1989
The long-standing problem of determining which interface-specific properties affect the band offset at semiconductor heterojunctions is readdressed using a newly developed theoretical approach. The…
Magnetic phase transition in strained MnAs compound
- A. Debernardi, M. Peressi, A. Baldereschi
- Materials Science
- 15 December 2003
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