Impact of crystal orientation on the modulation bandwidth of InGaN/GaN light-emitting diodes
- M. Monavarian, A. Rashidi, D. Feezell
- Physics
- 22 January 2018
High-speed InGaN/GaN blue light-emitting diodes (LEDs) are needed for future gigabit-per-second visible-light communication systems. Large LED modulation bandwidths are typically achieved at high…
A Decade of Nonpolar and Semipolar III‐Nitrides: A Review of Successes and Challenges
- M. Monavarian, A. Rashidi, D. Feezell
- PhysicsPhysica Status Solidi (a)
- 27 December 2018
The performance of III‐nitride devices is degraded by polarization in a wurtzite crystal structure. Nonpolar and semipolar III‐nitrides have been extensively studied since the early 2000s as a…
Electrically Injected GHz-Class GaN/InGaN Core–Shell Nanowire-Based μLEDs: Carrier Dynamics and Nanoscale Homogeneity
- M. Nami, A. Rashidi, D. Feezell
- Materials ScienceACS Photonics
- 1 July 2019
We present the first demonstration of RF characteristics of electrically injected GaN/InGaN core–shell nanowire-based micro light-emitting diodes (μLEDs) for μLED displays and visible-light communi...
Differential carrier lifetime and transport effects in electrically injected III-nitride light-emitting diodes
- A. Rashidi, M. Nami, D. Feezell
- Engineering
- 20 July 2017
This work describes a small-signal microwave method for determining the differential carrier lifetime and transport effects in electrically injected InGaN/GaN light-emitting diodes (LEDs). By…
High-Voltage Regrown Nonpolar ${m}$ -Plane Vertical p-n Diodes: A Step Toward Future Selective-Area-Doped Power Switches
- M. Monavarian, G. Pickrell, D. Feezell
- Computer ScienceIEEE Electron Device Letters
- 11 January 2019
High-voltage regrown nonpolar p-n diodes on freestanding GaN substrates do not result in very early breakdown in the reverse bias although the off-state leakage current in the forward bias is affected.
Polarity control and residual strain in ZnO epilayers grown by molecular beam epitaxy on (0001) GaN/sapphire
- Md. B. Ullah, V. Avrutin, H. Morkoç
- Materials Science
- 1 September 2016
We report on the polarity control of ZnO grown by plasma assisted molecular beam epitaxy on Ga polar (0001) GaN/sapphire templates simply via the oxygen‐to‐Zn (VI/II) ratio during the growth of a…
Investigation of interfacial impurities in m-plane GaN regrown p-n junctions for high-power vertical electronic devices
- I. Stricklin, M. Monavarian, D. Feezell
- Materials ScienceOptical Engineering + Applications
- 7 September 2018
GaN is an attractive material for high-power electronics due to its wide bandgap and large breakdown field. Verticalgeometry devices are of interest due to their high blocking voltage and small form…
Thermal quenching of the yellow luminescence in GaN
- M. Reshchikov, N. Albarakati, M. Monavarian, V. Avrutin, H. Morkoç
- Materials Science
- 28 April 2018
We observed varying thermal quenching behavior of the yellow luminescence band near 2.2 eV in different GaN samples. In spite of the different behavior, the yellow band in all the samples is caused…
Trade-off between bandwidth and efficiency in semipolar (202¯1¯) InGaN/GaN single- and multiple-quantum-well light-emitting diodes
- M. Monavarian, A. Rashidi, D. Feezell
- Physics
- 9 May 2018
InGaN/GaN light-emitting diodes (LEDs) with large modulation bandwidths are desirable for visible-light communication. Along with modulation speed, the consideration of the internal quantum…
Nonpolar ${m}$ -Plane InGaN/GaN Micro-Scale Light-Emitting Diode With 1.5 GHz Modulation Bandwidth
- A. Rashidi, M. Monavarian, A. Aragon, A. Rishinaramangalam, D. Feezell
- PhysicsIEEE Electron Device Letters
- 6 February 2018
We demonstrate a high-speed nonpolar <inline-formula> <tex-math notation="LaTeX">${m}$ </tex-math></inline-formula>-plane InGaN/GaN micro-scale light-emitting diode (LED) with a record electrical −3…
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