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Modeling spiral inductors in SOS processes
Existing models for simulating spiral inductors fabricated in silicon processes are outgrowths of the PI structure originally employed by Nguyen and Meyer (1990). This structure and its subsequentExpand
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A novel four-quadrant analog multiplier using SOI four-gate transistors (G/sup 4/-FETs)
TLDR
A novel analog multiplier using SOI four-gate transistors (G/sup 4/-FETs) is presented. Expand
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Subthreshold slope modulation in G 4 -FET transistor
We describe the operation of the novel SOI four-gate transistor (G4-FET) in the subthreshold region. The subthreshold slope, which may be defined with respect to either the junction gates or MOSExpand
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A miniaturized neuroprosthesis suitable for implantation into the brain
This paper presents current research on a miniaturized neuroprosthesis suitable for implantation into the brain. The prosthesis is a heterogeneous integration of a 100-element microelectromechanicalExpand
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The Four-Gate Transistor
The four-gate transistor or G4-FET combines MOSFET and JFET principles in a single SOI device. Experimental results reveal that each gate can modulate the drain current. Numerical simulations areExpand
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A new approach to designing electronic systems for operation in extreme environments: Part I - The SiGe Remote Sensor Interface
We have described the modeling, circuit design, system integration, and measurement of a Remote Sensor Interface (Figure 20) that took place over a span of 5 years and 8 fabrication cycles. It wasExpand
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Evidence for reduction of noise and radiation effects in G/sup 4/-FET depletion-all-around operation
The low noise and radiation-hard operation of the SOI four-gate transistor (G/sup 4/-FET) is experimentally demonstrated. When operated in depletion-all-around (DAA) mode, the G/sup 4/-FET drainExpand
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Back-gate and series resistance effects in LDMOSFETs on SOI
Detailed experimental results are used to develop a new model for the linear region of operation of lateral DMOSFETs (LDMOSFETs) on silicon-on-insulator (SOI) that includes the influence of theExpand
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A new approach to designing electronic systems for operation in extreme environments: Part II - The SiGe remote electronics unit
We have presented the architecture, simulation, packaging, and over-temperature and radiation testing of a complex, 16-channel, extreme environment capable, SiGe Remote Electronics Unit containingExpand
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Switch array system for thin film lithium microbatteries
Integrated microbatteries are currently being developed to provide reliable low-noise voltage sources for system-on-a-chip applications by Jet Propulsion Laboratory (JPL). These microbatteries helpExpand
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