• Publications
  • Influence
In situ observation of electromigration-induced void migration in dual-damascene Cu interconnect structures
In situ electromigration experiments were carried out to study electromigration-induced failure in the upper and lower layers in dual-damascene Cu test structures. The observations revealed
In situ SEM observation of electromigration phenomena in fully embedded copper interconnect structures
An experimental set-up is presented, that allows in situ scanning electron microscope (SEM) investigations of the progress of electromigration damage in fully embedded copper interconnect structures.
X-ray microscopy in Zernike phase contrast mode at 4 keV photon energy with 60 nm resolution
We report on x-ray microscopy of advanced microelectronic devices imaged in Zernike-type phase contrast mode at 4 keV photon energy. Fresnel zone plates were used as high resolution x-ray objectives
High resolution X-ray tomography with applications in biology and materials science
With the new tomography setup developed for the x-ray microscope XM-I installed at the Advanced Light Source, tomography of immunolabelled frozen-hydrated cells to detect protein distributions inside
Effect of interface strength on electromigration-induced inlaid copper interconnect degradation: Experiment and simulation
Abstract Both in situ microscopy experiments at embedded inlaid copper interconnect structures and numerical simulations based on a physical model provide information about electromigration-induced
Effect of interface modification on EM-induced degradation mechanisms in copper interconnects
Abstract Electromigration (EM) in sub-micron metal interconnects depends on interface bonding and metal microstructure. The process of EM-induced degradation in on-chip interconnects as observed from
Microstructural Evolution of Localized Shear Bands Induced during Explosion in Ti-6Al-4V Alloy
Microstructures of the localized shear bands generated during explosion with a thick-walled cylinder specimen in Ti-6Al-4V alloy, were characterized by TEM and SEM. The results show that the twinning
Direct evidence of electromigration failure mechanism in dual-damascene Cu interconnect tree structures
In situ secondary electron microscope (SEM) characterizations were carried out to study electromigration failure mechanism in dual-damascene Cu interconnect tree structures, which are important for
Geometry and Microstructure Effect on EM-Induced Copper Interconnect Degradation
Statistical analysis of electromigration (EM) lifetimes of inlaid copper interconnects, in situ microscopy experiments at embedded inlaid copper interconnect structures, and numerical simulations of
Dynamical x-ray microscopy investigation of electromigration in passivated inlaid Cu interconnect structures
Quantitative time-resolved x-ray microscopy mass transport studies of the early stages of electromigration in an inlaid Cu line/via structure were performed with about 40 nm lateral resolution. The
...
1
2
3
4
5
...