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Effects of Back Contact Instability on Cu2ZnSnS4 Devices and Processes
Cu2ZnSnS4 (CZTS) is a promising material for thin film solar cells based on sustainable resources. This paper explores some consequences of the chemical instability between CZTS and the standard MoExpand
Electronic structure of the GaAs:MnGa center
The excitation spectrum of the 0.11-eV Mn acceptor in GaAs has been thoroughly investigated by uniaxial stress and Zeeman fourier transform infrared spectroscopy. The results give strong evidence forExpand
Annealing behavior between room temperature and 2000 °C of deep level defects in electron-irradiated n-type 4H silicon carbide
The annealing behavior of irradiation-induced defects in 4H-SiC epitaxial layers grown by chemical-vapor deposition has been systematically studied by means of deep level transient spectroscopy (DLExpand
Ion implantation range distributions in silicon carbide
The first to fourth order distribution moments, Rp, ΔRp, γ, and β, of 152 single energy 1H, 2H, 7Li, 11B, 14N, 16O, 27Al, 31P, 69Ga, and 75As implantations into silicon carbide (SiC) have beenExpand
Ion implantation damage annealing in 4H-SiC monitored by scanning spreading resistance microscopy
To obtain a better understanding of the damage annealing process and dopant defect incorporation and activation we have implanted epitaxially grown 4H-SiC layers with high doses of Al+ ions. Cross-Expand
Compensation in boron‐doped CVD diamond
Hall-effect measurements on single crystal boron-doped CVD diamond in the temperature interval 80-450 K are presented together with SIMS measurements of the dopant concentration. Capacitance-voltagExpand
Electronic stopping cross sections in silicon carbide for low-velocity ions with 1⩽Z1⩽15
The mean projected range Rp for a large number of 1H, 2H, 7Li, 11B, 14N, 16O, 27Al, and 31P implantations into SiC with ion energies ranging from 0.5 keV to 4 MeV are investigated. From the Rp dataExpand
Aluminum and boron diffusion in 4H-SiC
A brief survey is given of some recent result of boron diffusion in low doped n-type (intrinsic) and p-type 4H-SiC. Aluminum diffusion and solubility limit in 4H-SiC are also discussed. Ion implantExpand
Improved interface and electrical properties of atomic layer deposited Al2O3/4H-SiC
In this paper we demonstrate a process optimization of atomic layer deposited Al2O3 on 4H-SiC resulting in an improved interface and electrical properties. For this purpose the samples have been trExpand
Electrical activation of high concentrations of N+ and P+ ions implanted into 4H–SiC
Comparative Hall effect investigations are conducted on N- and P-implanted as well as on (N+P)-coimplanted 4H–SiC epilayers. Box profiles with three different mean concentrations ranging fromExpand
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