• Publications
  • Influence
Memristor-based memory: The sneak paths problem and solutions
TLDR
We analyze the read operation of memristor-based memories using normalized noise margins and provide a noise margin metric to compare the various solutions proposed in the literature. Expand
Silicon nanotube field effect transistor with core-shell gate stacks for enhanced high-performance operation and area scaling benefits.
We introduce the concept of a silicon nanotube field effect transistor whose unique core-shell gate stacks help achieve full volume inversion by giving a surge in minority carrier concentration inExpand
CMOS-Technology-Enabled Flexible and Stretchable Electronics for Internet of Everything Applications.
Flexible and stretchable electronics can dramatically enhance the application of electronics for the emerging Internet of Everything applications where people, processes, data and devices will beExpand
Flexible Nanoporous Template for the Design and Development of Reusable Anti-COVID-19 Hydrophobic Face Masks
Since the outbreak of the severe respiratory disease caused by the novel coronavirus (COVID-19), the use of face masks has become ubiquitous worldwide to control the rapid spread of this pandemic. AsExpand
High-Performance Silicon Nanotube Tunneling FET for Ultralow-Power Logic Applications
  • H. Fahad, M. Hussain
  • Materials Science
  • IEEE Transactions on Electron Devices
  • 15 February 2013
To increase typically low output drive currents from tunnel field-effect transistors (FETs), we show a silicon vertical nanotube (NT) architecture-based FET's effectiveness. Using core (inner) andExpand
Thin PZT‐Based Ferroelectric Capacitors on Flexible Silicon for Nonvolatile Memory Applications
A flexible version of traditional thin lead zirconium titanate ((Pb1.1Zr0.48Ti0.52O3)-(PZT)) based ferroelectric random access memory (FeRAM) on silicon shows record performance in flexible arena.Expand
Design and analysis of compact ultra Energy-Efficient logic gates using laterally-actuated double-electrode NEMS
TLDR
This paper reports device fabrication and modeling, as well as novel logic gate design using “laterally-actuated double-electrode NEMS” structures. Expand
Can We Build a Truly High Performance Computer Which is Flexible and Transparent?
TLDR
We show a generic batch process to convert high performance silicon electronics into flexible and semi-transparent one while retaining its performance, process compatibility, integration density and cost. Expand
Transformational silicon electronics.
In today's traditional electronics such as in computers or in mobile phones, billions of high-performance, ultra-low-power devices are neatly integrated in extremely compact areas on rigid andExpand
Are Nanotube Architectures More Advantageous Than Nanowire Architectures For Field Effect Transistors?
Decade long research in 1D nanowire field effect transistors (FET) shows although it has ultra-low off-state leakage current and a single device uses a very small area, its drive current generationExpand
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