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Very low surface recombination velocity on p-type c-Si by high-rate plasma-deposited aluminum oxide
Aluminum oxide layers can provide excellent passivation for lowly and highly doped p-type silicon surfaces. Fixed negative charges induce an accumulation layer at the p-type silicon interface,Expand
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Very low surface recombination velocity of boron doped emitter passivated with plasma-enhanced chemical-vapor-deposited AlOx layers
Abstract In this work, we present a systematic study of the surface recombination velocity of boron-diffused Si wafer passivated with plasma-enhanced chemical-vapor-deposited (PECVD) AlO x layers.Expand
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Silicon Surface Passivation by Thin Thermal Oxide/PECVD Layer Stack Systems
For the passivation of p-type silicon surfaces, we investigate layer systems consisting of a thin layer of thermally grown SiO2 and different dielectric capping layers deposited by means ofExpand
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High-temperature stability of c-Si surface passivation by thick PECVD Al2O3 with and without hydrogenated capping layers
Abstract We are studying the thermal stability of thick hydrogenated amorphous aluminum oxide (Al2O3) layers (20–50 nm) prepared by a high-throughput plasma-enhanced chemical-vapor-deposition (PECVD)Expand
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Advanced analytical model for the effective recombination velocity of locally contacted surfaces
In this paper an analytical model of the effective recombination (Seff) on the back surface of locally contacted solar cell is developed. We justify this approach by first showing that theExpand
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Variation of the layer thickness to study the electrical property of PECVD Al2O3 / c-Si interface
Abstract This paper focusses in particular on the influence of the layer thickness on the passivation quality, the charge density and the interface defects of PECVD Al 2 O 3 passivation layers onExpand
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Nanotextured multicrystalline Al‐BSF solar cells reaching 18% conversion efficiency using industrially viable solar cell processes
We report recent achievements in adapting industrially used solar cell processes on nanotextured surfaces. Nanostructures were etched into c-Si surfaces by dry exothermic plasma-less reaction of FExpand
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On the Nature of Emitter Diffusion and Screen-Printing Contact Formation on Nanostructured Silicon Surfaces
In this paper, we study the impact of change in emitter diffusion profiles on the electrical characteristics of nanotextured surfaces formed by an inline plasma-less dry-chemical etching process. OurExpand
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Gas outflow and dust transport of comet 67P Churyumov Gerasimenko
Because of the diurnal thermal cycle and the irregular shape of the nucleus, gas outflow of comet 67P/Churyumov-Gerasimenko could be highly anisotropic as indicated by the colliminated dust jet strExpand
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