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A TiSi2 silicided shallow n+p junction with a leakage current density of about 3 nA/cm2, a forward ideality factor of 1.00, and a junction depth of about 0.11 μm has been fabricated by implanting P+… (More)
Parasitic capacitors, which occur between cold cathode fluorescent lamps (CCFLs) and the back-plank in backlight modules of liquid crystal display (LCD) panels, are changed by the lamp position.… (More)