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- Publications
- Influence
Microwave Noise Characterization of GaAs MESFET's: Evaluation by On-Wafer Low-Frequency Output Noise Current Measurement
- M. Gupta, O. Pitzalis, S. Rosenbaum, P. Greiling
- Mathematics
- 1 December 1987
A simplified noise equivalent circuit is presented for submicron-gate-length MESFET's in the common-source configuration, consisting of five linear circuit elements: the gate-to source capacitance… Expand
Microwave noise characterization of GaAs MESFET's: determination of extrinsic noise parameters
- M. Gupta, P. Greiling
- Physics
- 1 April 1988
A previously proposed noise equivalent circuit model for a GaAs MESFET (M. S. Gupta et al., ibid., vol.35, no.12, p.1208-18, 1987) is supplemented with a model for device parasitics, in order to… Expand
Definition of instantaneous frequency and frequency measurability
- M. Gupta
- Physics
- 1 December 1975
It is pointed out that the definitions of instantaneous and Fourier frequencies of a signal are noncausal and their measurement requires physically unrealizable systems. Some additional definitions… Expand
Determination of the noise parameters of a linear 2-port
- M. Gupta
- Computer Science
- 20 August 1970
TLDR
Degradation of power combining efficiency due to variability among signal sources
- M. Gupta
- Mathematics
- 1 May 1992
The power combining efficiency of a symmetric n-way power combiner depends on the degree of imbalance among its input signals. The worst-case efficiency is established for a combiner when its input… Expand
Microwave engineering and applications
- M. Gupta
- Engineering
- IEEE Transactions on Education
- 1 May 1984
TLDR
Power combining efficiency and its optimisation
- M. Gupta
- Mathematics
- 1 June 1992
The power combining efficiency of an n-way power combiner is calculated in terms of the scattering matrix of the combiner network, and the factors affecting it are identified. The maximum value of… Expand
Performance and Design of Microwave FET Harmonic Generators
Experimental measurements of the power gain of a 4- to 8-GHz frequency doubler, employing a single-gate GaAs MESFET device and a microstrip circuit, are reported. The measured performance provides… Expand
Noise Considerations in Self-Mixing IMPATT-Diode Oscillators for Short-Range Doppler RADAR Applications
- M. Gupta, R. J. Lomax, G. Haddad
- Physics
- 1974
The influence of the oscillator noise on the minimum detectable signal of a Doppler RADAR with a self-mixing IMPATT-diode oscillator is evaluated. For very short-range RADARs, it is the AM noise… Expand