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Publications Influence

Microwave Noise Characterization of GaAs MESFET's: Evaluation by On-Wafer Low-Frequency Output Noise Current Measurement

- M. Gupta, O. Pitzalis, S. Rosenbaum, P. Greiling
- Mathematics
- 1 December 1987

A simplified noise equivalent circuit is presented for submicron-gate-length MESFET's in the common-source configuration, consisting of five linear circuit elements: the gate-to source capacitance… Expand

63 2- PDF

Microwave noise characterization of GaAs MESFET's: determination of extrinsic noise parameters

- M. Gupta, P. Greiling
- Physics
- 1 April 1988

A previously proposed noise equivalent circuit model for a GaAs MESFET (M. S. Gupta et al., ibid., vol.35, no.12, p.1208-18, 1987) is supplemented with a model for device parasitics, in order to… Expand

50 1- PDF

Definition of instantaneous frequency and frequency measurability

- M. Gupta
- Physics
- 1 December 1975

It is pointed out that the definitions of instantaneous and Fourier frequencies of a signal are noncausal and their measurement requires physically unrealizable systems. Some additional definitions… Expand

42 1

Determination of the noise parameters of a linear 2-port

- M. Gupta
- Computer Science
- 20 August 1970

TLDR

24 1

Degradation of power combining efficiency due to variability among signal sources

- M. Gupta
- Mathematics
- 1 May 1992

The power combining efficiency of a symmetric n-way power combiner depends on the degree of imbalance among its input signals. The worst-case efficiency is established for a combiner when its input… Expand

25 1

Microwave engineering and applications

- M. Gupta
- Engineering
- IEEE Transactions on Education
- 1 May 1984

TLDR

15 1

Power combining efficiency and its optimisation

- M. Gupta
- Mathematics
- 1 June 1992

The power combining efficiency of an n-way power combiner is calculated in terms of the scattering matrix of the combiner network, and the factors affecting it are identified. The maximum value of… Expand

25

Performance and Design of Microwave FET Harmonic Generators

Experimental measurements of the power gain of a 4- to 8-GHz frequency doubler, employing a single-gate GaAs MESFET device and a microstrip circuit, are reported. The measured performance provides… Expand

31- PDF

Noise Considerations in Self-Mixing IMPATT-Diode Oscillators for Short-Range Doppler RADAR Applications

- M. Gupta, R. J. Lomax, G. Haddad
- Physics
- 1974

The influence of the oscillator noise on the minimum detectable signal of a Doppler RADAR with a self-mixing IMPATT-diode oscillator is evaluated. For very short-range RADARs, it is the AM noise… Expand

16- PDF