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We demonstrate the use of a scanned probe microscope (SPM) at 4 Kelvin to study electron transport through a ballistic point contact in the two‐dimensional electron gas inside a GaAs/AlGaAsExpand
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The multilayer effect in abrasion — optimising the combination of hard and tough phases
In the present investigation it is shown that the wear resistance of multilayer PVD coatings, combining relatively soft but tough chromium (Cr) and harder but more brittle chromium nitride (CrN):Expand
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Excitation of longitudinal and transverse coherent acoustic phonons in nanometer free-standing films of (001) Si
Transmission electron diffraction is naturally sensitive to the detection of shear-type deformations in single-crystalline structures due to the effective tilting of the lattice planes characteristicExpand
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Measurements of in-plane material properties with scanning probe microscopy
Scanning probe microscopy (SPM) was originally conceived as a method for measuring atomic-scale surface topography. Over the last two decades, it has blossomed into an array of techniques that can beExpand
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Comparison of wear characteristics of etched-silicon and carbon nanotube atomic-force microscopy probes
The resolution and wear properties of carbon nanotube and etched-silicon atomic force microscopy probes are compared in intermittent-contact mode. Carbon nanotube probes have at least 20 times theExpand
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Electrically directed assembly and detection of nanowire bridges in aqueous media
Although dielectrophoresis has been used previously to manipulate a variety of nanoscale materials, manipulation in ionic solutions is more difficult due to the high dielectric constant of water andExpand
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Microparticle manipulation using inertial forces
We demonstrate controlled manipulation of large quantities of microparticles on a surface using inertial forces. Motion is induced by applying a periodic parabolic wave form to a shear-polarizedExpand
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The influence of the insulator surface properties on the hydrogen response of field-effect gas sensors
The hydrogen response of gas-sensitive field-effect devices is mainly due to trapping of atomic hydrogen on the insulator side of the metal-insulator interface of the metal-insulator-semiconductorExpand
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Single-crystal silicon/silicon dioxide multilayer heterostructures based on nanomembrane transfer
A method to fabricate single-crystal Si∕SiO2 multilayer heterostructures is presented. Heterostructures are fabricated by repeated transfer of single crystal silicon nanomembranes alternating withExpand
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GaAs/AlGaAs self-sensing cantilevers for low temperature scanning probe microscopy
We have fabricated scanning probe microscope cantilevers with dimensions 65×11.4×0.25 μm3 and 3×2×0.129 μm3 from GaAs/Al0.3Ga0.7As heterostructures containing two-dimensional electron gases.Expand
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