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C.M.O.S. devices fabricated on buried SiO2 layers formed by oxygen implantation into silicon
Buried SiO2, layers were formed by oxygen-ion (14O+) implantation into silicon. The impurity distribution of the oxygen-implanted silicon substrate was analysed by auger spectroscopy. TheExpand
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LSI's for digital signal processing
TLDR
This paper describes high-performance CMOS LSI's for digital signal-processing (DSP) technology, such as digital filter, fast Fourier transform (FFT), discrete Fourier transforms (DFT), and digital phase-locked loop (DPLL). Expand
  • 15
LSIs for digital signal processing
TLDR
The authors describe high-performance CMOS LSIs for digital signal-processing (DSP) technology, such as digital filter, fast Fourier transform (FFT), discrete Fouriers transform (DFT), and digital phase-locked loop (DPLL), for communication use. Expand
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Hybrid IC Structures Using Solder Reflow Technology
A study of hybrid IC's produced by solder refiow technology was carried out to achieve optimum miniaturization and substantial cost reduction. Thin-film resistor and capacitor network (R-C) chips andExpand
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A New Self‐Aligned Planar Oxidation Technology
This paper presents a new self‐aligned planar oxidation technology (SPOT) developed as an isolation process for obtaining highly uniform planar surfaces in very‐high‐speed bipolar LSI's. In the SPOTExpand
  • 10
Semiconductor device and process for their preparation
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