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Explanation of the Rugged LDMOS Behavior by Means of Numerical Analysis
In this paper, a numerical investigation on the behavior of a rugged LDMOS transistor operating in the high current-voltage pulsed regime is carried out with the aim of clarifying the physical originExpand
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Physics-Based Analytical Model for HCS Degradation in STI-LDMOS Transistors
A physics-based analytical model for the on-resistance in the linear transport regime and its application as an alternative tool for the investigation of the hot-carrier stress degradation inExpand
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Analysis of HCS in STI-based LDMOS transistors
A numerical investigation of the hot-carrier behavior of a lateral DMOS transistor with shallow trench isolation (STI) is carried out. The measured drain-current degradation induced by hot-carrierExpand
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Measurement and modeling of the electron impact-ionization coefficient in silicon up to very high temperatures
In this paper, an experimental investigation on high-temperature electron impact-ionization in silicon is carried out with the aim of improving the qualitative and quantitative understanding ofExpand
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Key technologies for system-integration in the automotive and Industrial Applications
System integration and high power density of monolithic and multichip designs are the driving force for the progress in power electronic systems. The whole system has to be considered and optimizedExpand
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Thermally-driven motion of current filaments in ESD protection devices
Dynamics of localized current filaments is analyzed in electrostatic discharge protection devices of a smart power technology during microsecond long constant current pulses. Experiments performed byExpand
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Annotated bibliography - property rights
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Moving current filaments in integrated DMOS transistors under short-duration current stress
Integrated vertical DMOS transistors of a 90-V smart power technology are studied under short-duration current pulses. Movement of current filaments and multiple hot spots observed by transientExpand
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Influence of inhomogeneous current distribution on the thermal SOA of integrated DMOS transistors
The forward bias safe operating area (FBSOA) of integrated VDMOS transistors in a 60 V smart power technology is studied under single stress. It is shown that it is necessary to consider theExpand
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