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Second-harmonic generation in silicon waveguides strained by silicon nitride.
Silicon photonics meets the electronics requirement of increased speed and bandwidth with on-chip optical networks. All-optical data management requires nonlinear silicon photonics. In silicon onlyExpand
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  • Open Access
Applicability conditions and experimental analysis of the variable stripe length method for gain measurements
We discuss here some crucial issues related to the validity of the variable stripe length (VSL) method to measure optical gain in semiconductor materials and we especially point out the mainExpand
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Size dependence of lifetime and absorption cross section of Si nanocrystals embedded in SiO2
Photoluminescence lifetimes and optical absorption cross sections of Si nanocrystals embedded in SiO 2 have been studied as a function of their average size and emission energy. The lifetimes spanExpand
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Characterization of Single-Photon Time Resolution: From Single SPAD to Silicon Photomultiplier
In this paper, we report on the characterization of the single-photon time resolution (SPTR) of the RGB (Red-Green-Blue) type silicon photomultipliers (SiPM) produced at FBK. We measured and comparedExpand
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Bound electronic and free carrier nonlinearities in Silicon nanocrystals at 1550nm.
We present a detailed investigation of the different processes responsible for the optical nonlinearities of silicon nanocrystals at 1550 nm. Through z-scan measurements, the bound-electronic andExpand
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Will silicon be the photonics material of the third millennium
Abstract. CMOS circuitry dominates the current semiconductor market due to the astonishing power of silicon electronic integration technology. In contrast to the dominance of silicon in electronics,Expand
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Second‐Order Optical Nonlinearity in Silicon Waveguides: Inhomogeneous Stress and Interfaces
The lack of a dipolar second-order susceptibility (χ(2)) in silicon due to the centrosymmetry of its diamond lattice usually inhibits efficient second-order nonlinear optical processes in the siliconExpand
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  • Open Access
Dynamics of stimulated emission in silicon nanocrystals
Time-resolved luminescence measurements on silicon nanocrystal waveguides obtained by thermal annealing of plasma-enhanced chemical-vapor-deposited thin layers of silicon-rich oxide have revealedExpand
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Optical gain and stimulated emission in silicon nanocrystals
ABSTRACT Time-resolved luminescence measurements on silicon nanocrystal waveguides have revealeda fast recombination dynamics, related to population inversion which leads to net optical gain.TheExpand
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Nonlinear optical properties of silicon nanocrystals grown by plasma-enhanced chemical vapor deposition
The real and imaginary parts of third-order nonlinear susceptibility χ(3) have been measured for silicon nanocrystals embedded in SiO2 matrix, formed by high temperature annealing of SiOx filmsExpand
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