Learn More
Negative bias temperature instability (NBTI) is studied in p-MOSFETs having decoupled plasma nitrided (DPN) gate oxides (EOT range of 12 Aring through 22Aring). Threshold voltage shift(More)
This paper describes the design and performance of a 90 nm CMOS SAW-less receiver with DigRF interface that supports 10 WCDMA bands (I, II, III, IV, V, VI, VIII, IX, X, XI) and 4 GSM bands (GSM850,(More)