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The greenhouse gas emissions (CO2, CH4, N2O) from a 2 ton (4.4 m3) deep litter pig manure pile (storage time 113 days during winter season) were quantified by using a tent, which covered the whole pile during the measuring periods only. The emissions were calculated in CO2 equivalents per kilogram dry matter by. Additionally the retention time (use of(More)
The degradation of eight unlabeled highly condensed polycyclic aromatic hydrocarbons (PAH) and the mineralization of three 14C-labeled PAH by the white-rot fungus Pleurotus sp. Florida was investigated. Three concentrations containing 50, 250 or 1250 μg each unlabeled PAH/5 g straw were added to sterile sea sand. Selected treatments were added subsequently(More)
Stigmatic surfaces of about 250 species from more than 100 families were examined by scanning electron microscopy. There are five main groups which differ by the amount of secretion, the morphology of the surface and the distribution of receptive cells. The types of stigmatic surfaces are often remarkably constant on the family level.Ericaceae andLiliaceae(More)
The ability of in vitro cultured cells of black nightshade, wheat, barley, soybean, tomato, mulberry and birch to grow in the presence of polycyclic aromatic hydrocarbons (PAHs) and polychlorinated biphenyls (PCBs) and to metabolise them was compared. No correlation was found between the resistance of the plants and removal of xenobiotics. Up to 20% of PCBs(More)
AlGaN/GaN HEMTs on silicon substrates have been fabricated and their static and small-signal RF characteristics investigated. The AlGaN/GaN material structures were grown on (111) p-Si by LP-MOVPE. Devices exhibit a saturation current of 0.91 A/mm, a good pinchoff and a peak extrinsic transconductance of 122 mS/mm. A unity current gain frequency of 12.5 GHz(More)
Selected material and device issues related to the performance of AlGaN/GaN HEMTs on (111) Si substrates are reported. It is shown that these devices can sustain significantly higher dc power (16 W/mm) than those grown on sapphire. Consequently smaller degradation in the device performance at higher temperatures (up to 400 8C) is demonstrated.(More)
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