M. V. Maximov

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UNLABELLED Ultrasmall microring and microdisk lasers with an asymmetric air/GaAs/Al0.98Ga0.02As waveguide and an active region based on InAs/InGaAs/GaAs quantum dots emitting around 1.3 μm were fabricated and studied. The diameter D of the microrings and microdisks was either 2 or 1.5 μm, and the inner diameter d of the microrings varied from 20% to 70% of(More)
We report on the transverse single-mode emission from InGaAs/GaAs quantum well edge-emitting lasers with broadened waveguide. The lasers are based on coupled large optical cavity (CLOC) structures where high-order vertical modes of the broad active waveguide are suppressed due to their resonant tunneling into a coupled single-mode passive waveguide. The(More)
Focused ion beam is applied to quantum dot based microresonators to form pits or groove on their surface. The emission spectra of the resonators based lasers are significantly thinned out after the ion beam milling, and one or two modes become dominant instead of a group of modes having comparable intensities. The linewidth of the lasing mode is kept(More)
High-performance injection microdisk (MD) lasers grown on Si substrate are demonstrated for the first time, to the best of our knowledge. Continuous-wave (CW) lasing in microlasers with diameters from 14 to 30 μm is achieved at room temperature. The minimal threshold current density of 600  A/cm2 (room temperature, CW regime, heatsink-free uncooled(More)
A turn on of a quantum dot (QD) semiconductor laser simultaneously operating at the ground state (GS) and excited state (ES) is investigated both experimentally and theoretically. We find experimentally that the slow passage through the two successive laser thresholds may lead to significant delays in the GS and ES turn ons. The difference between the(More)
In this work we report, to the best of our knowledge, the first quantum well electrically-pumped microdisk lasers monolithically deposited on (001)-oriented Si substrate. The III-V laser structure was epitaxially grown by MOCVD on silicon with an intermediate MBE-grown Ge buffer. Microlasers with an InGaAs/GaAs quantum well active region were tested at room(More)
Hybrid quantum well-dots (QWD) nanostructures have been formed by deposition of 7-10 monolayers of In0.4Ga0.6As on a vicinal GaAs surface using metal-organic chemical vapor deposition. Transmission electron microscopy, photoluminescence and photocurrent analysis have shown that such structures represent quantum wells comprising three-dimensional (quantum(More)