M. V. Maximov

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Surface density of self-organized InAs quantum dots in a GaAs matrix was correlated to MBE growth conditions. Surface density as low as 2*10 9 cm-2 was achieved. A number of devices that exploit quantum dots (QD) is currently growing extremely fast. For certain applications some specific properties of QD array are of most importance. There is therefore a(More)
UNLABELLED Ultrasmall microring and microdisk lasers with an asymmetric air/GaAs/Al0.98Ga0.02As waveguide and an active region based on InAs/InGaAs/GaAs quantum dots emitting around 1.3 μm were fabricated and studied. The diameter D of the microrings and microdisks was either 2 or 1.5 μm, and the inner diameter d of the microrings varied from 20% to 70% of(More)
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