M. V. Kaydash

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We have obtained output characteristics of graded-gap AlInN diodes with different cathode contacts in a wide range of frequencies (fig. 1, table 1). The graded-gap AlInN TEDs can effectively operate in the microwave frequency generation mode up to 0.9 ÷ 1.3 THz. For similar InN-diodes the frequency limit is 0.7 ÷ 0.8 THz. Optimal length of the(More)
The usage of graded-gap semiconductors in the Gunn diodes results in increasing the output power and efficiency of the electromagnetic waves generation. However, the ternary compound InGaAs does not create the optimal distribution profile of binary semiconductor components. This disadvantage can be eliminated in AlGaInAs compound. The paper presents the(More)
The usage of graded-gap semiconductors can increase the efficiency and output power of Gunn generators. The energy gap between the valleys in InBN and GaBN compounds, unlike other ternary semiconductor nitrides, can be reduced to zero. This gives the opportunity to find the optimal distribution of the BN component in graded gap compounds for Gunn diodes. In(More)
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