M. Tsuchiaki

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Thermally unstable NiSi films on shallow junctions are known to induce large leakage current on heat stimulus. Thus, a sensitive and comparative investigation is conducted on efficiency of leakage suppression by pre-SALICIDE ion implantation (PSII) for NiSi formation. F-PSII is found to be greatly superior to N-PSII. Unlike N-PSII, F-PSII drastically(More)
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