M. Tordjman

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a Department of Information Engineering, University of Padova, Via Gradenigo 6/B, I-35135 Padova, Italy b Department of Engineering “Enzo Ferrari”, University of Modena and Reggio Emilia, Italy c Selex E.S., a Finmeccanica Company, via Tiburtina, km 12.400, 00131 Rome, Italy d 3-5 Lab/Thales Research & Technology, Route de Nozay, 91460 Marcoussis, France e(More)
We report on the electron transport properties of two-dimensional electron gas confined in a quaternary barrier InAlGaN/AlN/GaN heterostructure down to cryogenic temperatures for the first time. A state-of-the-art electron mobility of 7340 cm2 ̈ V ́1 ̈ s ́1 combined with a sheet carrier density of 1.93 ˆ 1013 cm ́2 leading to a remarkably low sheet(More)
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