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Infrared (IR) sensor technology is critical to all phases of ballistic missile defense. Traditionally, material systems such as indium antimonide (InSb), platinum silicide (PtSi), mercury cadmium telluride (MCT), and arsenic doped silicon (Si: As) have dominated IR detection. Improvement in surveillance sensors and interceptor seekers requires large, highly(More)
A thermal vapor transport process has been employed for fabrication of boron-related (boron, boron – silicon alloys, and MgB 2) nanowire films on Au-coated Si and MgO substrates. Tangled polycrystalline as well as aligned single-crystalline boron nanowires (BNWs) have been obtained and their growth mechanism investigated at different growth temperatures,(More)
We report a type-II superlattice mid-wave infrared 320×256 imager at 81 K with the M-barrier design that achieved background limited performance (BLIP) and ∼99% operability. The 280 K blackbody's photon irradiance was limited by an aperture and a band-pass filter from 3.6 μm to 3.8 μm resulting in a total flux of ∼5×10(12) ph.cm(-2).s(-1). Under these(More)
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