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This paper presents data on proton displacement damage on light-emitting diodes (LEDs) and infrared emitting diodes (IREDs) of different technologies between 650 and 950 nm. 160 devices of a variety of 28 different COTS emitters were irradiated. Most irradiations were carried out with 52 MeV protons. Two components were also studied with 30 and 60 MeV(More)
Components off the shelf (cots) photodiodes suitable for OWLS were irradiated with ~10 to ~60 MeV protons and up to fluences of ~2.5-10<sup>12</sup> p/cm<sup>2</sup>. Electrical and optoelectronic parameters were measured during the test (I-V curves, dark current, responsivity and ideal diode factor). Results on degradation and post-annealing are reported.(More)
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