M. Sunkara

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We synthesize vertically oriented core-shell nanowires with substoichiometric MoO(3) cores of ∼20-50 nm and conformal MoS(2) shells of ∼2-5 nm. The core-shell architecture, produced by low-temperature sulfidization, is designed to utilize the best properties of each component material while mitigating their deficiencies. The substoichiometric MoO(3) core(More)
  • M K Sunkara, S Sharma, R Miranda, G Lian, E C Dickey
  • 2001
Silicon nanowires will find applications in nanoscale electronics and optoelectronics both as active and passive components. Here, we demonstrate a low-temperature vapor–liquid–solid synthesis method that uses liquid-metal solvents with low solubility for silicon and other elemental semiconductor materials. This method eliminates the usual requirement of(More)
fluidic applications as well as nanostructured percolation media. The hollow funnels can also serve as ªnanocruciblesº for metal alloy production, which permit the containment and handling of very small amounts of metals. The latter would be of interest to the field of combinatorial synthesis, for instance, as potential micro/nano arrays for solid-state(More)
Indium nitride (InN) nanowire synthesis using indium (In) vapor transport in a dissociated ammonia environment (reactive vapor transport) is studied in detail to understand the nucleation and growth mechanisms involved with the so-called "self-catalysis" schemes. The results show that the nucleation of InN crystal occurs first on the substrate. Later, In(More)
A concept is presented for synthesizing metal nanowires directly from the vapor phase using chemical vapor transport to temperatures higher than the corresponding metal oxide decomposition temperature. Specifically, this concept is demonstrated with the synthesis of tungsten metal nanowires with sizes ranging from 70 to 40 nm by increasing the condensation(More)
Synthesis of nanowires of Group III antimonides (GaSb and InSb) is studied in detail using two approaches: (i) direct antimonidization of Group III metal droplets and (ii) reactive vapor transport of Group III metals in the presence of antimony in the vapor phase. The diameter of the GaSb nanowires ranged from 30 to 700 nm and length from a few to hundreds(More)
We report the growth and detailed structural investigation of a new morphological manifestation of carbon-based nanostructures in the form of tapered whiskers with uniform 1−3 nm hollowness. The base of the whiskers is in the submicron scale, tapering uniformly to form a pointed tip in the form of a pipette. These hollow nanopipettes have a shell containing(More)
We report near-infrared lasing in the telecommunications band in gallium antimonide semiconductor subwavelength wires. Our results open the possibility of the use of semiconductor subwavelength-wire lasers in future photonic integrated circuits for telecommunications applications. Semiconductor subwavelength wires ͑SWWs͒ are ideal structures for lasers in(More)
This paper predicts the bandgaps of over 200 new chalcopyrite compounds for previously untested chemistries. An ensemble data mining approach involving Ordinary Least Squares (OLS), Sparse Partial Least Squares (SPLS) and Elastic Net/Least Absolute Shrinkage and Selection Operator (Lasso) regression methods coupled to Rough Set (RS) and Principal Component(More)