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Hydrogenated multilayers (MLs) of a-Si/a-Ge have been analysed to establish the reasons of H release during annealing that has been seen to bring about structural modifications even up to well-detectable surface degradation. Analyses carried out on single layers of a-Si and a-Ge show that H is released from its bond to the host lattice atom and that it… (More)
Because the composition and the thickness of the thin films are very important for the fabrication of the devices, in this study we have undertaken the determination of the composition and the thickness of the RF sputtered amorphous silicon alloy thin films deposited at room temperature under very different preparation conditions by using various… (More)
A Gires-Tournois interferometer has been applied for intracavity chirp compensation of an actively mode-locked GaAs laser. Fourier-transform-limited pulses as short as 4.6 psec have been obtained at 790 nm.
Reactive sputtering of silicon nitride was used to prepare single layer antireflection coating on one of the facets of a semiconductor laser. During the deposition the film thickness was controlled with two different methods. In the first case the laser was driven below its threshold current, and the light emitted from the facet being coated controlled the… (More)
Differently hydrogenated radio frequency-sputtered a-Si layers have been studied by infrared (IR) spectroscopy as a function of the annealing time at 350°C with the aim to get a deeper understanding of the origin of blisters previously observed by us in a-Si/a-Ge multilayers prepared under the same conditions as the ones applied to the present a-Si layers.… (More)