M. Schmidbauer

  • Citations Per Year
Learn More
Anisotropic surface diffusion and strain are used to explain the formation of three-dimensional (In,Ga)As quantum dot lattices. The diffusion characteristics of the surface, coupled with the elastic anisotropy of the matrix, provides an excellent opportunity to influence the dot positions. In particular, quantum dots that are laterally organized into long(More)
X-ray diffraction from films consisting of layers with different thicknesses, structures and chemical contents is analysed. The disorder is described by probabilities for different sequences of layers. Closed analytical expressions for the diffracted X-ray intensity are obtained when the layers form a stationary Markov chain. The proposed model is applied(More)
Herein we investigate a (001)-oriented GaAs1-xBix/GaAs structure possessing Bi surface droplets capable of catalysing the formation of nanostructures during Bi-rich growth, through the vapour-liquid-solid mechanism. Specifically, self-aligned "nanotracks" are found to exist trailing the Bi droplets on the sample surface. Through cross-sectional(More)
A new scattering technique in grazing-incidence X-ray diffraction geometry is described which enables three-dimensional mapping of reciprocal space by a single rocking scan of the sample. This is achieved by using a two-dimensional detector. The new set-up is discussed in terms of angular resolution and dynamic range of scattered intensity. As an example(More)
epitaxy J. Ibáñez, R. Oliva, M. De la Mare, M. Schmidbauer, S. Hernández, P. Pellegrino, D. J. Scurr, R. Cuscó, L. Artús, M. Shafi, R. H. Mari, M. Henini, Q. Zhuang, A. Godenir, and A. Krier Institut Jaume Almera, Consell Superior d’Investigacions Científiques (CSIC), Lluís Solé i Sabarís s.n, 08028 Barcelona, Catalonia, Spain Department of Physics,(More)
The lattice parameters of three perovskite-related oxides have been measured with high precision at room temperature. An accuracy of the order of 10(-5) has been achieved by applying a sophisticated high-resolution X-ray diffraction technique which is based on the modified Bond method. The results on cubic SrTiO(3) [a = 3.905268 (98) Å], orthorhombic(More)
A novel concept to obtain a ferroelectric material with enhanced piezoelectric properties is proposed. This approach is based on the combination of two pathways: (i) the evolution of a ferroelectric monoclinic phase and, (ii) the coexistence of different types of ferroelectric domains leading to polarization discontinuities at the domain walls. Each of(More)
In this work, photomodulated transmittance (PT) has been applied to investigate the energy gap of GaBiAs layers grown on (0 01) and (311)B GaAs substrates. In PT spectra, a clear resonance has been observed below the GaAs edge. This resonance has been attributed to the energy gap-related absorption in GaBiAs. The energy and broadening of PT resonances have(More)
The structural and optical properties of GaAs1-xBix quantum wells (QWs) symmetrically clad by GaAs barriers with and without additional confining AlGaAs layers are studied. It is shown that a GaAs/GaAs1-xBix/GaAs QW with x ~ 4% and well width of ~ 4 nm grown by molecular beam epitaxy demonstrates efficient photoluminescence (PL) that becomes significantly(More)
Articles you may be interested in Band alignment of HfO2/In0.18Al0.82N determined by angle-resolved x-ray photoelectron spectroscopy Appl. Angle‐resolved photoelectron spectroscopy of N2O measured as a function of photon energy from 14 to 70 eV We have measured photoionization cross sections and photoelectron asymmetry parameters for each of the core levels(More)