M. Saif Islam

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We demonstrate an effective method for depositing smooth silver (Ag) films on SiO(2)/Si(100) substrates using a thin seed layer of evaporated germanium (Ge). The deposited Ag films exhibit smaller root-mean-square surface roughness, narrower peak-to-valley surface topological height distribution, smaller grain-size distribution, and smaller sheet resistance(More)
We report simultaneous lateral growth of a high density of highly oriented, metal-catalyzed silicon nanowires on a patterned silicon substrate and bridging of nanowires between two vertical silicon sidewalls, which can be developed into electrodes of an electronic device. After angled deposition of catalytic metal nanoparticles on one of two opposing(More)
We demonstrate a smooth and low loss silver ͑Ag͒ optical superlens capable of resolving features at 1 / 12 th of the illumination wavelength with high fidelity. This is made possible by utilizing state-of-the-art nanoimprint technology and intermediate wetting layer of germanium ͑Ge͒ for the growth of flat silver films with surface roughness at subnanometer(More)
Mechanical properties of self-welded ͓111͔ single-crystal silicon nanowire bridges grown between two silicon posts using metal-catalyzed chemical vapor deposition were determined using both dynamic and static measurements. The static tests were carried out using atomic force microscopy ͑AFM͒ to measure the nanowires' Young's modulus and the strength of the(More)
Several hundred million volts per centimetre of electric-field strength are required to field-ionize gas species. Such fields are produced on sharp metallic tips under a bias of a few kilovolts. Here, we show that field ionization is possible at dramatically lower fields on semiconductor nanomaterials containing surface states, particularly with(More)
Well-aligned single crystalline ZnO nanobridges have been synthesized selectively across the prefabricated electrodes on silicon substrates by a single-step thermal evaporation method without using any metal catalysts or a predeposited ZnO seed layer that was a prerequisite for such synthesis. The growth region was self-defined by the anisotropic surface of(More)
Laterally oriented single-crystal silicon nanowires are epitaxially grown between highly doped vertically oriented silicon electrodes in the form of nanobridges. Resistance values extracted from the current-voltage measurements for a large number of nanobridges with varying lengths and diameters are used to propose a model which highlights the relative(More)
We demonstrate an all-dielectric quantum electrodynamical nanowire-slab system with a single emitter that concentrates the extremely intense light at the scale of 10 × 75 nm(2). The quantum dot exhibits a record high 31-fold spontaneous decay rate enhancement, its optical saturation and blinking are strongly suppressed, and 80% of emission couples into a(More)
Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use. The MIT Faculty has made this article openly available. Please share how this access benefits you. Your story matters. ABSTRACT High performance thermoelectric materials in a wide range of(More)