M. S. Iovu

  • Citations Per Year
Learn More
The steady-state photocurrent spectra of Sb2Se3 and Sb2Se3: Sn films in the photon energies ranged from 1 to 2.5 eV for different values of electric field intensity and temperatures were investigated. In the photocurrent spectra the peak near 1.5 eV, caused by the defect band, was revealed. For the amorphous Sb2Se3 thin film samples with tin impurity the(More)
Photostructural transformations in amorphous films of chalcogenide glasses (ChG) under light irradiation present scientific and practical interests. That is well known that the composition of ChG determines the kind of structural units and the mean coordination number. In the present work the amorphous films of the chalcogenide systems As100-xSex (x=40÷98),(More)
The visible luminescence from Pr<sup>3+</sup>, Dy<sup>3+</sup>, Nd<sup>3+</sup>, Sm<sup>3+</sup> and codoped with Ho<sup>3+</sup> and Dy<sup>3+</sup> ions embedded in Ga<inf>0.017</inf>Ge<inf>0.25</inf>As<inf>0.083</inf>S<inf>0.65</inf> glass hosts at room temperature and at T=10 K is reported, when pumping with an Ar<sup>+</sup>-ion laser at &#x03BB;=488(More)
The quasi-static capacitance of As<inf>10</inf>Se<inf>90</inf> amorphous film was studied in cycles of heating and cooling near the glass transition temperature T<inf>g</inf>=343 K. Features in the capacitance behavior such as the non-exponential relaxation and non-Arrhenius form of time relaxations in dependence on temperature are revealed. It was(More)
Photodarkening relaxation under light exposure of a-As2Se3 amorphous films doped with 0.5-5.0 at.% Sn was studied for its dependence on the concentration of impurities and thermal treatment. Both factors reduce photodarkening with the degree of reduction dependent on the concentration of impurity. The relaxation process may be described by a stretched(More)