M.S. Denker

We don’t have enough information about this author to calculate their statistics. If you think this is an error let us know.
Learn More
The authors report the growth of B-doped Si/SiGe multiple quantum wells (MQW) structures by rapid thermal chemical vapor deposition (RTCVD) for intersubband transitions with extreme uniformity and interface abruptness. An excellent well to well uniformity is reported as measured through high resolution SIMS
  • 1