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A new 600V GaAs Power Schottky diode is compared with Si and SiC diodes in a 200W CCM-PFC system. With both, GaAs and SiC, the PFC system losses were reduced up to 25%. Higher on-state losses of GaAs vs. SiC are compensated by lower MOSFET losses due to the GaAs diode’s lower capacitance. Given the cost advantage and ruggedness of GaAs compared to SiC(More)
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