M. R. Jennings

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Boron (B), molybdenum (Mo), and selenium (Se) were measured in water, sediment, particulate organic detritus, and in various biota--filamentous algae, net plankton, macro-invertebrates, and fishes--to determine if concentrations were elevated from exposure to agricultural subsurface (tile) drainage during the spring and fall 1987, in the San Joaquin River,(More)
AlGaN/GaN HEMTs are devices which are strongly influenced by surface properties such as donor states, roughness or any kind of inhomogeneity. The electron gas is only a few nanometers away from the surface and the transistor forward and reverse currents are considerably affected by any variation of surface property within the atomic scale. Consequently, we(More)
The 4H-SiC Schottky diode with 2-step mesa junction termination extension (JTE) structure has been investigated and optimized using SILVACO device simulator. Comparisons between different JTE structures of breakdown voltage and electric field crowding for Schottky diodes have been made. Simulation results show that the Space Modulated two-zone JTE has the(More)
The gallium nitride (GaN)-based buffer/barrier mode of growth and morphology, the transistor electrical response (25-310 °C) and the nanoscale pattern of a homoepitaxial AlGaN/GaN high electron mobility transistor (HEMT) have been investigated at the micro and nanoscale. The low channel sheet resistance and the enhanced heat dissipation allow a highly(More)
In this paper, the application of a combined high temperature (1550°C) thermal oxidation / annealing process has been applied to 4H-SiC PiN diodes with 110 μm thick n-type drift regions, for the purpose of increasing the carrier lifetime in the semiconductor. PiN diodes were fabricated on lifetime-enhanced 4H-SiC material, then were(More)
The thermal cycling reliability of candidate copper and aluminium power substrates has been assessed for use at temperatures exceeding 300°C peak using a combination of thermal cycling, nanoindentation and finite element modelling to understand the relative stresses and evolution of the mechanical properties. The results include the relative cycling(More)
3C-SiC can be grown on large area silicon substrates, thus potentially it can lower the cost of wide band gap power devices. However, the uncertain carrier transportation at the 3C-SiC/Si interface does not favour vertical device structures. A lateral design can avoid this problem without removing the substrate after epitaxial growth. In this work, a novel(More)
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